Phase-selective fluorescence of doped Ge2Sb2Te5 phase-change memory thin films

Ke Zhang; Jincheng Lin; Yang Wang

doi:10.3788/COL201513.121601

Journals >Chinese Optics Letters >Volume 13 >Issue 12 >Page 121601 > Article

Chinese Optics Letters
Vol. 13, Issue 12, 121601 (2015)

Phase-selective fluorescence of doped Ge₂Sb₂Te₅ phase-change memory thin films

Ke Zhang, Jincheng Lin, and Yang Wang^*

Author Affiliations

Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

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DOI: 10.3788/COL201513.121601 Cite this Article Set citation alerts

Ke Zhang, Jincheng Lin, Yang Wang. Phase-selective fluorescence of doped Ge₂Sb₂Te₅ phase-change memory thin films[J]. Chinese Optics Letters, 2015, 13(12): 121601 Copy Citation Text

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Fig. 1. Energy level transition diagram of luminescence of Ni2+ in ZnAl2O4 crystals and Bi+ in silicate glasses as shown in Ref. [11].

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$(a) Refractive index n and (b) extinction coefficient k of amorphous and crystallized Bi:GST thin films.$

Fig. 2. (a) Refractive index n and (b) extinction coefficient k of amorphous and crystallized Bi:GST thin films.

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$(a) Refractive index n and (b) extinction coefficient k of amorphous and crystallized Ni:GST thin films.$

Fig. 3. (a) Refractive index n and (b) extinction coefficient k of amorphous and crystallized Ni:GST thin films.

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Fig. 4. Fluorescence spectra of (a) Bi:GST and (b) Ni:GST thin films. The inset shows the corresponding XRD patterns.

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Fig. 5. Fluorescence intensities at 1065 and 1140 nm of crystallization degree-modulated Ni:GST thin films.

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	Bi: GST	Ni: GST
Resistivity of Amorphous State ( $Ω \cdot cm$ )	$8.93 \times 10^{2}$	$3.28 \times 10^{3}$
Resistivity of Crystalline State ( $Ω \cdot cm$ )	$1.31 \times 10^{- 2}$	$1.18 \times 10^{- 2}$
Refractive Index of Amorphous State (at 650 nm)	3.24	3.06
Refractive Index of Crystalline State (at 650 nm)	3.1	2.65
Extinction Coefficient of Amorphous State (at 650 nm)	1.65	1.6
Extinction Coefficient of Crystalline State (at 650 nm)	1.74	2.47

Table 1. Basic Electrical and Optical Parameters of Ni:GST and Bi:GST Thin Films

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	Amorphous	Crystalline
Ni:GST	off	on
Bi:GST	on	off

Table 2. Opposite Phase-Selective Fluorescence Effects of Doped GST Thin Films

Ke Zhang, Jincheng Lin, Yang Wang. Phase-selective fluorescence of doped Ge₂Sb₂Te₅ phase-change memory thin films[J]. Chinese Optics Letters, 2015, 13(12): 121601

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