Phase-selective fluorescence of doped Ge2Sb2Te5 phase-change memory thin films

Ke Zhang; Jincheng Lin; Yang Wang

doi:10.3788/COL201513.121601

Journals >Chinese Optics Letters >Volume 13 >Issue 12 >Page 121601 > Article

Chinese Optics Letters
Vol. 13, Issue 12, 121601 (2015)

Phase-selective fluorescence of doped Ge₂Sb₂Te₅ phase-change memory thin films

Ke Zhang, Jincheng Lin, and Yang Wang^*

Author Affiliations

Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

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DOI: 10.3788/COL201513.121601 Cite this Article Set citation alerts

Ke Zhang, Jincheng Lin, Yang Wang. Phase-selective fluorescence of doped Ge₂Sb₂Te₅ phase-change memory thin films[J]. Chinese Optics Letters, 2015, 13(12): 121601 Copy Citation Text

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Ke Zhang, Jincheng Lin, Yang Wang. Phase-selective fluorescence of doped Ge₂Sb₂Te₅ phase-change memory thin films[J]. Chinese Optics Letters, 2015, 13(12): 121601

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