[1] T. A. Yost, P. R. Herczfeld, B. Nabet, V. M. Contarino, J. A. Culp. A large area, high speed photodetector for a microwave modulated hybrid lidar-radar application. International Microwave & Optoelectronics Conference(1997).
[2] Y. Li, W. Yuan, K. Li, X. Duan, K. Liu, Y. Huang. InGaAs/InAlAs SAGCMCT avalanche photodiode with high linearity and wide dynamic range. Chin. Opt. Lett., 20, 022503(2022).
[3] X. Zhou, J. Li, W. Lu, Y. Wang, X. Song, S. Yin, X. Tan, Y. Lü, H. Guo, G. Gu, Z. Feng. Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection. Chin. Opt. Lett., 16, 060401(2018).
[4] Y. Li, X. Liu, X. Li, L. Zhang, B. Chen, Z. Zhi, X. Li, G. Zhang, P. Ye, G. Huang, D. He, W. Chen, F. Gao, P. Guo, X. Luo, G. Lo, J. Song. Germanium-on-silicon avalanche photodiode for 1550 nm weak light signal detection at room temperature. Chin. Opt. Lett., 20, 062501(2022).
[5] R. G. Brown. VIS-NIR plasmonic APD detectors. U.S. patent(2014).
[6] F. Sun, H. Gu, Z. Wang, L. Chen. Simulation and parameters optimization of high gain silicon micro-pixel avalanche photodiode. Proc. SPIE, 8555, 855518(2012).
[7] X. Wang, W. Hu, P. Ming, L. Hou, X. Wei, J. Xu, X. Li, X. Chen, W. Lu. Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes. J. Appl. Phys., 115, 013103(2014).
[8] M. J. Lee. First CMOS silicon avalanche photodetectors with over 10-GHz bandwidth. IEEE Photon. Technol. Lett., 28, 276(2015).
[9] J. W. Shi, C. W. Liu. Avalanche photo-detector with high saturation power and high gain-bandwidth product. U.S. patent(2005).
[10] J. Szlufcik, S. Sivoththaman, J. F. Nlis, R. P. Mertens, R. Van Overstraeten. Low-cost industrial technologies of crystalline silicon solar cells. Proc. IEEE, 85, 711(1997).
[11] E. Pilicer, F. Kocak, I. Tapan. Excess noise factor of neutron-irradiated silicon avalanche photodiodes. Nucl. Instrum. Methods. Phys. Res. B, 552, 146(2005).
[12] F. Laforce. Optical receiver using silicon APD for space applications. Proc. SPIE, 7330, 73300R(2009).
[13] J. R. Biard, W. N. Shaunfield. A model of the avalanche photodiode. IEEE Trans. Electron. Devices, 14, 233(1967).
[14] I. Węgrzecka, M. Węgrzecki, M. Grynglas, J. Bar, A. Uszynski, R. Grodecki, P. Grabiec, S. Krzeminski, T. Budzynski. Design and properties of silicon avalanche photodiodes. Opto-Electron. Rev., 12, 95(2004).
[15] P. N. Aruev, B. Ya Ber, A. N. Gorokhov, V. V. Zabrodskii, D. Y. Kazantsev, A. V. Nikolaev, V. V. Filimonov, M. Z. Shvarts, E. V. Sherstnev. Characteristics of a silicon avalanche photodiode for the near-IR spectral range. Tech. Phys. Lett., 45, 780(2019).
[16] V. V. Zabrodskii, P. N. Aruev, B. Y. Ber, D. Y. Kazantsev, A. N. Gorokhov, A. V. Nikolaev, V. V. Filimonov, M. Z. Shvarts, E. V. Sherstnev. Quantum yield of a silicon XUV avalanche photodiode in the 320-1100 nm wavelength range. Tech. Phys. Lett., 45, 1226(2019).
[18] . First sensor APD array data sheet(2019).
[19] . Silicon APD arrays(2022).
[20] X. Guo, L. B. Rowland, G. T. Dunne, J. A. Fronheiser, P. M. Sandvik, A. L. Beck, J. C. Campbell. Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes. IEEE Photon. Technol. Lett., 18, 136(2005).
[21] I. Janekovic, T. Knezevic, T. Suligoj, D. Grubisic. Optimization of floating guard ring parameters in separate-absorption-and-multiplication silicon avalanche photodiode structure. International Convention on Information & Communication Technology, Electronics & Microelectronics, 37(2015).
[22] W. Wei, Y. Linshu, W. Chuan, D. Chaoyu, W. Ting, W. Guanyu, Y. Jun, W. Zhen. Analysis of separate-absorption-charge-multiplication Ge/Si-APD. Infrared Laser Eng., 44, 1349(2015).
[23] S. M. Sze. Modern Semiconductor Device Physics(1998).
[24] Y. M. Kang, H. D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. H. Kuo, H. W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. G. Zheng, J. C. Campbell. Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product. Nat. Photonics, 3, 59(2009).
[25] M. J. Lee, W. Y. Choi. A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product. Opt. Express, 18, 24189(2010).
