High-uniformity 2 &#215; 64 silicon avalanche photodiode arrays with silicon multiple epitaxy technology

Tiancai Wang; Peng Cao; Hongling Peng; Chuanwang Xu; Haizhi Song; Wanhua Zheng

doi:10.3788/COL202321.032501

Journals >Chinese Optics Letters >Volume 21 >Issue 3 >Page 032501 > Article

Chinese Optics Letters
Vol. 21, Issue 3, 032501 (2023)

High-uniformity 2 × 64 silicon avalanche photodiode arrays with silicon multiple epitaxy technology

Tiancai Wang^1、2, Peng Cao^1、2, Hongling Peng^1、3、*, Chuanwang Xu^1、2, Haizhi Song⁴, and Wanhua Zheng^{1、3、5、6、**}

Author Affiliations

¹Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²College of Electronic and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

⁴Southwest Institute of Technology Physics, Chengdu 610041, China

⁵Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

⁶Weifang Academy of Advanced Opto-electronic Circuits, Weifang 261021, China

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DOI: 10.3788/COL202321.032501 Cite this Article Set citation alerts

Tiancai Wang, Peng Cao, Hongling Peng, Chuanwang Xu, Haizhi Song, Wanhua Zheng. High-uniformity 2 × 64 silicon avalanche photodiode arrays with silicon multiple epitaxy technology[J]. Chinese Optics Letters, 2023, 21(3): 032501 Copy Citation Text

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