Author Affiliations
MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, Chinashow less
1. Schematic diagram of passivation strategies for different ligands on the surface of CsPbX3 nanocrystals
2. (a) Schematic diagram of instability mechanism of CsPbX3 nanocrystals, (b) agglomeration and (c) decomposing product of CsPbX3 nanocrystals, and schematic diagram of (d) phase transition (non-perovskite phase) and (e) phase transition (perovskite phase)
3. (a) Passivation strategy based on hard Lewis acid ligands (left), images under 365 nm UV light (middle), and photoluminescence decay curves (right) of nanocrystals with high and low defect densities
[25]; (b) Schematic diagram of DETAI
3 surface passivation strategy (left), absorption curves (middle) and long-term phase stability (right) of CsPbI
3‧
xDETAI
3 thin films
[29] 4. (a) Schematic diagram of Lewis base surface passivation strategy for CsPbX
3 nanocrystals; (b) Theoretical calculation of the binding energy of mono- and dicarboxylic acids on the surface of CsPbI
3 nanocrystals
[34]; (c) Schematic diagram of OPA and OAm-CsPbX
3 surface passivation strategies and photos after multiple purifications
[35]; (d) Surface passivation strategy with zwitterionic ligands (sulfobetaines, phosphocholines and
γ-amino acids)
[36] 5. (a) Passivation strategies with different ligands (OAm, OA and DBSA) on the surface of CsPbBr
3 nanocrystals and (b) the corresponding exciton recombination processes
[37]; (c) Schematic diagram of PbBr
x-rich surface of OAm-CsPbBr
3 nanocrystals (left) and Br-rich surface of OAm/OA-CsPbBr
3 nanocrystals (right)
[11]; (d) Photographs showing the resistance of different samples against water treatment of OAm/OA-CsPbBr
3 nanocrystals (above) and OAm-CsPbBr
3 nanocrystals (below)
[11] 6. (a) Schematic diagram of CPB-DBAE@SiO
2 preparation process
[51]; (b) Transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM) images of CsPbBr
3@SiO
2 nanocrystals and photographs of water stability
[60]; (c) Schematic representation (left), HRTEM image (middle), and plot of emission intensity under continuous pulsed laser irradiation (right) of CsPbBr
3/CdS nanocrystals
[67] Ligands | Treating agent | QY/% | Stability | Ref. |
---|
OA/OAm | DDDMAB | ~100 | 21 d | [9] | OA/OAm | TOAB | 95 | - | [25] | OA/OAm | DDAB | 96 | - | [26,30] | OA/OAm | NH4BF4 | (95±2) | - | [27] | OA/OAm | NH4SCN | (99±2) | - | [28] | OA/OAm | Trimethylsilyl iodine | 85 | 105 d | [31] | OA/OAm | Oxalic acid | 89 | - | [32] |
|
Table 1. Surface passivation strategies of Lewis acid ligands
Ligands | QY/% | Stability | Ref. |
---|
OAm | ~100 % | - | [11] | OA | 70 | - | [33] | IDA/OAm | 95 | 40 d | [34] | OPA/TOPO | >90 | - | [35] | Zwitterion | >90 | 28 d | [36] | DBSA | 95 | 5 m | [37] | TMPPA/OAm | 90 | 28 d | [38] | OA/TOPO | 90 | - | [39] | TDPA/OAm | 68 | - | [40] | DA | 94.3 | 70 d | [41] |
|
Table 2. Surface passivation strategies of Lewis base ligands
Strategies | Characteristics | Advantages | Disadvantages | Ref. |
---|
Lewis acid ligands | Quaternary ammonium salt | Large steric hindrance | High QY* | Instable | [9,25-26,30] | Lewis base ligands | Carboxylic acids | Hard base, weak acid | Simple synthesis | Instable, low QY | [32-33] | Phosphoric acid | Soft alkali, moderately strong acid | High QY, stable | TOPO assisted dissolution | [35] | Zwitterionic ligands | Surfactant | High QY, stable | Complex process | [36] | Sulfonic acid | Soft alkali, strong acid | High QY, stable | High temperature | [37] | Neutral ligands | Lone pair electrons | High QY, stable | Room temperature | [11] |
|
Table 3. Characteristics, advantages and disadvantages of different passivation strategies