[1] K. J. Lee,E. H. Shin,K. Y. Lim. Reduction of dislocation in GaN epilayers grown on Si(111) substrate using SixNy inserting layer[J]. Appl. Phys. Lett.,2004,85(9):1502-1504
[2] S. Nakamura,M. Senoh,S. Nagahama et al.. Continuous-wave operation ofInGaN/GaN/AlGaN -based laser diodes grown on GaN substrates[J]. Appl. Phys. Lett.,1998,72(16):2014-2016
[3] V. Tilak,B. Green,V. Kaper et al.. Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs[J]. IEEE. Elec. Dev. Lett.,2001,22(11):504-506
[5] N. Marquestaut,D. Talaga,L. Servant et al.. Imaging of Single GaN nanowires by tip-enhanced Raman spectroscopy[J]. J. Raman Spec.,2009,40(10):1441-1445
[7] T. Liang,J. Tang,J. Xiong et al.. Synthesis and characterization of heteroepitaxy GaN films on Si(111)[J]. Vaccum,2010,84(9):1154-1158
[8] S. Nakamura,Y. Harada,M. Seno. Novel metalorganic chemical vapor deposition system for GaN growth[J]. Appl. Phys. Lett.,1991,58(18):2021-2023
[9] K. Mutamba,A. Sigurdardóttir,A.Vogt et al.. A comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband InAs/AlSb/GaSb resonant tunneling diodes[J]. Appl. Phys. Lett.,1998,72(13):1629-1631
[10] J. Chen,I. D. Wolf . Study of damage and stress induced by backgrinding in Si wafers[J]. Semi. Scie.& Tech.,2003,18(4):261-268
[12] W. E. Fenwick,N. Li,T. Xu et al.. MOCVD growth of GaN on Si(111) substrates using an ALD-grown Al2O3 interlayer[J]. J. Crystal Growth,2009,311(18):4306-4310
[13] E. Arslan,M. K. Ozturk,A. Teke et al.. Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD[J]. J. Phys. D:Appl. Phys.,2008,41:155317
[14] J. B. Jeon,B. C. Lee,Y. M. Sirenko et al.. Strain effects on optical gain in wurtzite GaN[J]. J. Appl. Phys.,1997,82(1):386-390
[15] T. Kozawa,T. Kachi,H. Kano et al.. Thermal stress in GaN epitaxial layers grown on sapphire substrates[J]. J. Appl. Phys.,1995,77(9):4389-4392
[16] Fen Qian,Hao Yue,Wang Fengxiang. Study on structure and strain property of GaN\:Si films[J]. Res. & Pro. Sse.,2005,25(4):485-488
[17] Xie Bin,Xue Chenyang,Zhang Wendong et al.. Mechanical-electrical coupling of double-barrier quantum well membran[J]. Chin. J. Semi.,2007,28(8):1211-1215
[18] C. Kisielowski,J. Krüger,S. Ruvimov et al.. Strain-related phenomena in GaN thin films[J]. Phys. Rev. B.,1996,54(24):17745-17753
[19] B. Jusserand,J. Sapriel. Raman investigation of anharmonicity and disorder-induced effects in Ga1-xAlx As epitaxial layers[J]. Phys. Eev. B.,1981,24(12):7194-7205