• Chinese Journal of Quantum Electronics
  • Vol. 38, Issue 2, 172 (2021)
Weimin HAN1、2、*, Youbao NI1, Haixin WU1、2, Zhenyou WANG1, and Changbao HUANG1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3969/j.issn.1007-5461. 2021.02.005 Cite this Article
    HAN Weimin, NI Youbao, WU Haixin, WANG Zhenyou, HUANG Changbao. Growth of a new long-wave infrared material PbGa6Te10[J]. Chinese Journal of Quantum Electronics, 2021, 38(2): 172 Copy Citation Text show less

    Abstract

    The new long-wave infrared material PbGa6Te10 has great application potential due to its high refractive index (>3), wide infrared transmittance range (1.4~22.3μm), good stability and mechanical properties. However, PbGa6Te10 is a non-identical eutectic compound, which can easily lead to segregation of components and the formation of heterogeneous phases. For this reason, high quality PbGa6Te10 polycrystal is synthesized by the oscillation-assisted single-temperature zone method, and the single crystal with a length of 100 mm and a maximum diameter of 26 mm is grown by the vertical Bridgman method. The as-grown crystals are characterized by X-ray powder diffraction, rocking curve, thermogravimetric differential thermal analysis, infrared transmittance, et al. Results show that the grown crystal is PbGa6Te10 single crystal. It is crystallized well, and the full width at half maximum (FHWM) is 0.214°. The crystal has good thermal stability. The band gap value of PbGa6Te10 calculated from the diffuse reflection absorption curve is 1.01 eV, and the transmittance curve shows that the average transmittance from 2.5 μm to 22.3 μm is about 28%.
    HAN Weimin, NI Youbao, WU Haixin, WANG Zhenyou, HUANG Changbao. Growth of a new long-wave infrared material PbGa6Te10[J]. Chinese Journal of Quantum Electronics, 2021, 38(2): 172
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