Mengyuan Ren, Fei Chen. Channel size-dependent TED effect in MOSFETs with infrared rapid thermal anneal[J]. Infrared and Laser Engineering, 2021, 50(5): 20200306
- Infrared and Laser Engineering
- Vol. 50, Issue 5, 20200306 (2021)
Fig. 1. Comparison diagram ofV t-L curve of NMOS and PMOS transistor
Fig. 2. Schematic diagram of V t measurement method
Fig. 3. Schematic diagram of MOSFETs structure and process
Fig. 4. V t-L curves of V t adjustment ion-implantation experiments
Fig. 5. V t-L curves of LDD ion-implantation experiments
Fig. 6. V t-L curves of LDD carbon ion co-implantation experiments
Fig. 7. V t curves with different channel sizes
Fig. 8. V t curves with different annealing process
Fig. 9. TCAD simulation result
Fig. 10. Schematic diagram of boron ion concentration distribution in devices with TED
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