Channel size-dependent TED effect in MOSFETs with infrared rapid thermal anneal

Fig. 1. Comparison diagram ofV_t-L curve of NMOS and PMOS transistor

Fig. 2. Schematic diagram of V_t measurement method

Fig. 3. Schematic diagram of MOSFETs structure and process

Fig. 4. V_t-L curves of V_t adjustment ion-implantation experiments

Fig. 5. V_t-L curves of LDD ion-implantation experiments

Fig. 6. V_t-L curves of LDD carbon ion co-implantation experiments

Fig. 7. V_t curves with different channel sizes

Fig. 8. V_t curves with different annealing process

Fig. 9. TCAD simulation result

Fig. 10. Schematic diagram of boron ion concentration distribution in devices with TED