Author Affiliations
School of Materials Science and Engineering, Zhejiang University, Hangzhou , Zhejiang 310058, Chinashow less
Fig. 1. Structure of the solar cell. (a) Structure
[9]; (b) typical
J-
V curve
[6]; (c) theoretical limit of the PCE
[10] Fig. 2. Schematic diagram of energy loss in single junction solar cell
[20] Fig. 3. Schematic diagram and integrated architecture of different light-emitting processes
[27] Fig. 4. Structure and working principle of the LSC device. (a) Structure; (b) primary luminescent process and light loss
[4] Fig. 5. Spectra directly used by PSC and spectra used through spectrum conversion
[4] Fig. 6. TeO2-ZnO DS luminescent glass. (a) TEM photo of Ag nanoparticles; (b) emission spectrum of 473 nm excitation light; (c)
J-
V curve of the Si solar cell
[46] Fig. 7. IPCE curve based on DS luminescent material DSSC
[67] Fig. 8. Luminescence pathway of the QC material
[75] Fig. 9. QC luminescent film based on Yb-SnO
x. (a) Fluorescence spectrum; (b)
J-V curve of the CIGS solar cell
[77] Fig. 10. Schematic diagram of the UC luminescent material
[28] Fig. 11. Schematic diagram of luminescent based on Yb
3+/Er
3+ UC
[94] Fig. 12. UC glass ceramic based on NLZ. (a) Emission spectrum (980 nm); (b)
J-V curve of the DSSC
[86] Classification | PCE /% | Area /cm2 | Voc /V | Jsc /(mA·cm-2) | Fill factor /% |
---|
Si (crystalline)[12] | 26.7±0.5 | 79.0(da) | 0.738 | 42.65 | 84.9 | Si (amorphous)[13] | 10.2±0.3 | 1.001(da) | 0.896 | 16.36 | 69.8 | GaAs (thin film)[14] | 29.1±0.6 | 0.998(ap) | 1.127 | 29.78 | 86.7 | CIGS[15] | 23.3±0.5 | 1.043(da) | 0.734 | 39.58 | 80.4 | Perovskite[16] | 20.9±0.7 | 0.991(da) | 1.125 | 24.92 | 74.5 | Dye sensitised[11] | 11.9±0.4 | 1.005(da) | 0.744 | 22.47 | 71.2 | Organic[17] | 17.3±0.2 | 1.000(da) | 0.841 | 26.20 | 78.3 |
|
Table 1. Best PCE of the single junction solar cells
Classification | Eg /eV | High EQE region /nm |
---|
Si (crystalline)[33] | 1.1 | 450‒1000 | GaAs (thin film)[33] | 1.4 | 500‒800 | CIGS/CZTS[33] | ~1.5 | 500‒900 | Perovskite[33] | ~1.6 | 400‒750 | Dye sensitised[34] | ~1.6 | 450‒800 | Organic[35] | 1.5‒2.0 | 350‒750 |
|
Table 2. Band gap and high EQE region of different solar cells
Cell type | Luminophore | Host material | λabs /nm | λem /nm | PCE /% | PCEDS /% | ΔPCE /percentage point |
---|
Perovskite | LiZnPO∶Sm3+, Ce3+[45] | glass | 330 | 410, 597 | 7.13 | 7.84 | 0.71 | c-Si | TeO2-ZnO∶Eu3+,Ag[46] | glass | 405, 473 | 614 | 5.28 | 6.02 | 0.74 | a-Si | SiAlBaCaOF∶Ce3+[47] | glass | 427 | 525 | 5.02 | 5.43 | 0.41 | c-Si | TeO2-ZnO∶Eu3+,Ag[48] | glass | 395, 473 | 610 | 10.00 | 11.27 | 1.27 | CdTe | B2O3-BaO∶Eu3+/Tb3+[49-50] | glass | 395 | 611 | - | - | 1.32 | c-Si | LiAlBaNaMgP∶Tb3+[52] | glass | 270, 380 | 545 | 14.21 | 15.10 | 0.89 | c-Si | SiO2∶Cu+[53] | glass | 260‒350 | 510 | - | - | 0.80 | c-Si | ZLAGF∶Tm3+[54] | glass | 467 | 650,794 | - | - | - | c-Si | silicate glass∶Ag+[55] | glass | 260, 350 | 550 | - | - | - | — | SiO2-LaF3∶Ce3+,Tb3+[56] | glass | 275 | 488, 542 | - | - | - | Perovskite | ZnGa2O4∶Eu3+[57] | phosphor | 400 | 610 | 7.41 | 7.93 | 0.52 | Perovskite | NaYF4∶Eu3+[58] | phosphor | 375 | 595, 614 | 16.99 | 19.89 | 2.90 | InGaP | CdSxSe1-x/ZnS[37] | quantum dot | 350 | 580 | 13.57 | 15.60 | 2.03 | GaAs | CdSe/ZnS[59] | quantum dot | 350 | 540 | 14.44 | 18.05 | 3.61 | DSSC | TiO2∶Eu3+[60] | nanorods | 325 | 614, 450 | 8.32 | 8.80 | 0.48 |
|
Table 3. Main parameters of the DS luminescent materials
Cell type | Luminophore | λabs /nm | λem /nm | QE /% | PCE /% | PCEQC /% | ΔPCE /percentage point |
---|
c-Si | TeO2-ZnO∶Tb3+/Yb3+[76] | 355 | 548, 980 | 113 | 6.98 | 7.46 | 0.48 | CIGS | SnOx∶Yb3+[77] | 355,482 | 973 | - | 9.86 | 10.45 | 0.59 | c-Si | YAG∶Nd3+/Yb3+[82] | 400 | 980 | 177.8 | - | - | - | c-Si | YAG∶Ce3+/Yb3+[80] | 339,460 | 980 | 166.8 | - | - | - | c-Si | SiNx∶Tb3+/Yb3+[79] | 325 | 990 | - | - | - | - | c-Si | SiAlBONaCaF∶Cr3+/Yb3+[78] | 430 | 970,1010 | 133.5 | - | - | - | c-Si | SALC∶Er3+/Yb3+[83] | 460 | 980 | 150.6 | - | - | - | c-Si | SAMOF∶Eu2+/Yb3+[84] | 323 | 976 | 158.9 | - | - | - |
|
Table 4. Main parameters of the QC luminescent materials
Cell type | Luminophore | λabs /nm | λem /nm | PCE /% | PCEUC /% | ΔPCE /percentage point |
---|
DSSC | CeO2∶Er3+,Yb3+[85] | 980 | 550,562 | 6.16 | 6.66 | 0.50 | DSSC | (rGO)NaYF4∶Yb3+,Er3+[98] | 980 | 550 | 5.63 | 6.20% | 0.57 | DSSC | Nb0.64La0.2Zr0.16O2.22∶Yb3+,Er3+[86] | 980 | 547,670 | 6.78 | 6.84 | 0.06 | Perovskite | LiYF4∶Yb3+,Er3+[87] | 980 | 547,556 | 11.00 | 11.87 | 0.87 | DSSC | Gd2O3∶Ho3+,Yb3+[99] | 980 | 550,665 | 6.70 | 7.40 | 0.7 | a-Si | β-NaYF4∶Yb3+,Er3+[100] | 980 | 540,653 | - | - | - | c-Si | In2ZnSrBaF12∶Er3+[101] | 1550 | 660,980 | - | - | - |
|
Table 5. Main parameters of the UC luminescent materials