• Journal of Semiconductors
  • Vol. 42, Issue 1, 013103 (2021)
Heyi Huang1、2, Chen Ge1、2, Zhuohui Liu1、2, Hai Zhong1, Erjia Guo1、2, Meng He1, Can Wang1、2、3, Guozhen Yang1, and Kuijuan Jin1、2、3
Author Affiliations
  • 1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 2School of Physical Sciences, University of Chinese Academy of Science, Beijing 100049, China
  • 3Songshan Lake Materials Laboratory, Dongguan 523808, China
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    DOI: 10.1088/1674-4926/42/1/013103 Cite this Article
    Heyi Huang, Chen Ge, Zhuohui Liu, Hai Zhong, Erjia Guo, Meng He, Can Wang, Guozhen Yang, Kuijuan Jin. Electrolyte-gated transistors for neuromorphic applications[J]. Journal of Semiconductors, 2021, 42(1): 013103 Copy Citation Text show less
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    Heyi Huang, Chen Ge, Zhuohui Liu, Hai Zhong, Erjia Guo, Meng He, Can Wang, Guozhen Yang, Kuijuan Jin. Electrolyte-gated transistors for neuromorphic applications[J]. Journal of Semiconductors, 2021, 42(1): 013103
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