• Acta Optica Sinica
  • Vol. 38, Issue 2, 0213001 (2018)
Liqiang Zhou*, Jie Zhang, Jian Ding, and Weiwei Chen
Author Affiliations
  • Faculty of Information Science and Engineering, Ningbo University, Ningbo, Zhejiang 315211, China
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    DOI: 10.3788/AOS201838.0213001 Cite this Article Set citation alerts
    Liqiang Zhou, Jie Zhang, Jian Ding, Weiwei Chen. Design of Graphene-Based Plasmonic XNOR/XOR Logic Gates[J]. Acta Optica Sinica, 2018, 38(2): 0213001 Copy Citation Text show less
    Structural diagram of graphene-based plasmonic XNOR/XOR logic gate
    Fig. 1. Structural diagram of graphene-based plasmonic XNOR/XOR logic gate
    Add-drop-channel micro-ring resonator of graphene-based plasmonic waveguide. (a) Three dimensional view; (b) top view
    Fig. 2. Add-drop-channel micro-ring resonator of graphene-based plasmonic waveguide. (a) Three dimensional view; (b) top view
    (a) Output response of add-drop-channel micro-ring resonators versus chemical potential of graphene when coupling gap is 2-6 nm and frequency is 30 THz. (a) Through-port; (b) drop-port
    Fig. 3. (a) Output response of add-drop-channel micro-ring resonators versus chemical potential of graphene when coupling gap is 2-6 nm and frequency is 30 THz. (a) Through-port; (b) drop-port
    Transmission of add-drop-channel micro-ring resonators versus frequency when coupling gap is 2 nm. (a) Through-port; (b) drop-port
    Fig. 4. Transmission of add-drop-channel micro-ring resonators versus frequency when coupling gap is 2 nm. (a) Through-port; (b) drop-port
    Magnetic field intensity distributions of add-drop-channel micro-ring resonators at frequency of 30 THz under different chemical potentials of graphene. (a) 0.677 eV; (b) 0.95 eV
    Fig. 5. Magnetic field intensity distributions of add-drop-channel micro-ring resonators at frequency of 30 THz under different chemical potentials of graphene. (a) 0.677 eV; (b) 0.95 eV
    Field intensity distributions of graphene-based plasmonic waveguide at frequency of 30 THz when chemical potential of graphene is 0.677 eV and 0.95 eV, respectively. (a) (c) Electric field; (b) (d) magnetic field
    Fig. 6. Field intensity distributions of graphene-based plasmonic waveguide at frequency of 30 THz when chemical potential of graphene is 0.677 eV and 0.95 eV, respectively. (a) (c) Electric field; (b) (d) magnetic field
    Magnetic field intensity distributions of XNOR/XOR logic gates of graphene-based plasmonic waveguide at frequency of 30 THz under different input logic states of MRR 1 and MRR 2. (a) 00; (b) 01; (c) 10; (d) 11
    Fig. 7. Magnetic field intensity distributions of XNOR/XOR logic gates of graphene-based plasmonic waveguide at frequency of 30 THz under different input logic states of MRR 1 and MRR 2. (a) 00; (b) 01; (c) 10; (d) 11
    Transmission spectra of XNOR/XOR logic gates of graphene-based plasmonic waveguide under different input logic states of MRR 1 and MRR 2. (a) 00; (b) 01; (c) 10; (d) 11
    Fig. 8. Transmission spectra of XNOR/XOR logic gates of graphene-based plasmonic waveguide under different input logic states of MRR 1 and MRR 2. (a) 00; (b) 01; (c) 10; (d) 11
    Liqiang Zhou, Jie Zhang, Jian Ding, Weiwei Chen. Design of Graphene-Based Plasmonic XNOR/XOR Logic Gates[J]. Acta Optica Sinica, 2018, 38(2): 0213001
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