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Journal of Infrared and Millimeter Waves
Vol. 41, Issue 4, 726 (2022)

Influence of In_yAl_1-yAs graded buffer layer on properties of InP-HEMT materials

Fang-Kun TIAN^1、2, Li-Kun AI^1、*, Guo-Yu SUN³, An-Huai XU¹, Hua HUANG¹, Qian GONG¹, and Ming QI¹

Author Affiliations

¹Key Laboratory of Terahertz Solid State Technology，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China

²Center of Materials Science and Optoelectronics Engineering，University of Chinese Academy of Sciences，Beijing 100049，China

³College of Physics and Electronic Engineering，Hainan Normal University，Haikou 571158，China

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DOI: 10.11972/j.issn.1001-9014.2022.04.011 Cite this Article

Fang-Kun TIAN, Li-Kun AI, Guo-Yu SUN, An-Huai XU, Hua HUANG, Qian GONG, Ming QI. Influence of In_yAl_1-yAs graded buffer layer on properties of InP-HEMT materials[J]. Journal of Infrared and Millimeter Waves, 2022, 41(4): 726 Copy Citation Text

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References

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Fang-Kun TIAN, Li-Kun AI, Guo-Yu SUN, An-Huai XU, Hua HUANG, Qian GONG, Ming QI. Influence of In_yAl_1-yAs graded buffer layer on properties of InP-HEMT materials[J]. Journal of Infrared and Millimeter Waves, 2022, 41(4): 726

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