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Journal of Semiconductors
Vol. 44, Issue 6, 062802 (2023)

Exploring heteroepitaxial growth and electrical properties of α-Ga₂O₃ films on differently oriented sapphire substrates

Wei Wang^1、2, Shudong Hu¹, Zilong Wang¹, Kaisen Liu¹, Jinfu Zhang¹, Simiao Wu¹, Yuxia Yang¹, Ning Xia³, Wenrui Zhang^1、4、*, and Jichun Ye^1、4、**

Author Affiliations

¹Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

²The Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211, China

³Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China

⁴Yongjiang Laboratory, Ningbo 315201, China

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DOI: 10.1088/1674-4926/44/6/062802 Cite this Article

Wei Wang, Shudong Hu, Zilong Wang, Kaisen Liu, Jinfu Zhang, Simiao Wu, Yuxia Yang, Ning Xia, Wenrui Zhang, Jichun Ye. Exploring heteroepitaxial growth and electrical properties of α-Ga₂O₃ films on differently oriented sapphire substrates[J]. Journal of Semiconductors, 2023, 44(6): 062802 Copy Citation Text

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References

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Wei Wang, Shudong Hu, Zilong Wang, Kaisen Liu, Jinfu Zhang, Simiao Wu, Yuxia Yang, Ning Xia, Wenrui Zhang, Jichun Ye. Exploring heteroepitaxial growth and electrical properties of α-Ga₂O₃ films on differently oriented sapphire substrates[J]. Journal of Semiconductors, 2023, 44(6): 062802

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