Hui-Lin HUANG, Jing HUANG, Quan SHI. A parameter extraction method of the Schottky diode millimeter wave equivalent circuit model[J]. Journal of Infrared and Millimeter Waves, 2021, 40(6): 732
- Journal of Infrared and Millimeter Waves
- Vol. 40, Issue 6, 732 (2021)
Fig. 1. （a）Cross-section of Schottky diode，（b）equivalent-circuit model
Fig. 2. Layouts of test structure （a）open, （b）short
Fig. 3. Equivalent circuit models of test structure （a）open, （b）short
Fig. 4. Layouts of test structure
Fig. 5. Equivalent circuit model under Schottky diode forward bias condition
Fig. 6. Equivalent circuit model under Schottky diode reversed bias condition
Fig. 7. Parasitic elements versus frequency in 1~40 GHz frequency range （a）pad capacitance
Fig. 8. ln（
Fig. 9. Total resistance
Fig. 10. Intrinsic elements versus the bias voltage
Fig. 11. Comparison of modeled and measured
Fig. 12. Comparison of modeled and measured data of Schottky diode （a）real part of S11 under reversed bias condition，（b）imaginary part of S11 under reversed bias condition，（c）real part of S11 under forward bias condition，（d）imaginary part of S11 under forward bias condition
Fig. 13. Relative error of S11 versus frequency
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Table 1. Extracted the model parameters of Schottky diode
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