• Journal of Infrared and Millimeter Waves
  • Vol. 40, Issue 6, 732 (2021)
Hui-Lin HUANG, Jing HUANG, and Quan SHI*
Author Affiliations
  • School of Information Science and Technology,Nantong University,Nantong 226019,China
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    DOI: 10.11972/j.issn.1001-9014.2021.06.005 Cite this Article
    Hui-Lin HUANG, Jing HUANG, Quan SHI. A parameter extraction method of the Schottky diode millimeter wave equivalent circuit model[J]. Journal of Infrared and Millimeter Waves, 2021, 40(6): 732 Copy Citation Text show less

    Abstract

    A millimeter wave equivalent circuit model parameters extraction method for Schottky diodes is proposed in this paper. The pad capacitance has been determined by using open circuit test structure, and the feedline inductance has been determined by using short-circuit test structure. The parasitic resistance has been extracted by using DC method and AC method respectively. An excellent fit between measured and simulated S-parameters in the frequency range of 1~40 GHz is obtained for GaAs Schottky diode.
    Hui-Lin HUANG, Jing HUANG, Quan SHI. A parameter extraction method of the Schottky diode millimeter wave equivalent circuit model[J]. Journal of Infrared and Millimeter Waves, 2021, 40(6): 732
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