Author Affiliations
1Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China2Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China3Chongqing School, University of Chinese Academy of Sciences, Chongqing 400714, China4College of Instrumentation and Electrical Engineering, Jilin University, Changchun 130061, Chinashow less
Fig. 1. Illustration of the high throughput materials chip fabrication method with electron beam deposition. (a) 12×12 mask of 3 patterns; (b) Illustration of the in site discrete mode process; (c) System setup for e-beam source, mask and sample stage; (d) Illustration of the ternary continuous gradient process; (e) Illustration of heat treatment process
Fig. 2. (a) Illustration of the THz mapping detection system in transmission mode; (b) THz time-domain spectra of the periodic temporal signals from multiple internal reflections; (c) Experimental setup of the THz emitter, the sample stage and the photoconductive detector
Fig. 3. (a)-(c) Optical images of the samples; (d)-(f) THz conductance imaging of the corresponding samples; (g) Comparison of metal film conductance obtained by different test methods
Fig. 4. (a) Cu thin film sample photo on high resistivity Si substrate; (b) THz conductance mapping image; (c) THz conductance variations of the sample spots; (d) Anisotropic variations along the horizontal direction of Fig.(a) and (b); (e) Anisotropic variations along the vertical direction of Fig.(a) and (b)
Fig. 5. Cu-Al2O3/Ag/Mg alloy thin film sample fabricated with the continuous gradient mode. (a) Optical image of the sample; (b) THz mapping imaging, scale bar=4 mm; (c) Comparison between the conductance trend of the 15 points marked in Fig.(b) obtained from THz and 4-point probe respectively
Fig. 6. Cu-Al2O3/Ag/Mg alloy thin film sample fabricated with the in site discrete mode. (a) Optical image of the sample; (b) THz mapping imaging; (c) Simulated combination of the thickness and positions of the constituents; (d) Index table of the sample spots; (e) Deposition parameters of multi-layer film
Fig. 7. SEM images of the 12×12 Cu-Al2O3/Ag/Mg Cu alloy thin film samples array, scale bar=100 μm
Fig. 8. (a) Relationship between the THz mapping conductance and that of the weight percentage of the samples constituents from column 164-214; (b) SEM microstructure morphology of representative sample spots with different conductance
| Sample constituents | Conductance/S | RD (THz-4PP)/4PP | THz | 4PP | A | Ti 56 nm | 0.0214 | 0.0209 | 2.39% | B | Ti 56 nm+Zr 30 nm | 0.0192 | 0.0215 | 10.7% | C | Ti 56 nm+Zr 30 nm+Al 24 nm | 0.146 | 0.178 | 17.8% |
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Table 1. Conductance value of metal films
Layer index | Materials | Thickness/nm | 1 | Ti | 5 | 2 | Cu | 80 | 3 | Ag | 0→ 12.7 | 4 | Cu | 10 | 5 | Al2O3 | 0→ 12.7 | 6 | Cu | 10 | 7 | Mg | 0→ 25.4 | 8 | Cu | 10 |
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Table 2. Constituents of the sample fabricated using the continuous gradient mode
| 1 | 2 | 3 | 4 | 5 | 4PP | 1.14 | 1.15 | 1.32 | 0.98 | 0.97 | THz | 0.76 | 0.86 | 0.91 | 0.59 | 0.66 | RD | −0.33% | −0.25% | −0.31% | −0.40% | −0.32% | | 6 | 7 | 8 | 9 | 10 | 4PP | 1.54 | 2.15 | 2.89 | 1.01 | 0.88 | THz | 1.06 | 1.47 | 2.24 | 0.77 | 0.64 | RD | −0.31% | −0.32% | −0.22% | −0.24% | −0.27% | | 11 | 12 | 13 | 14 | 15 | 4PP | 0.65 | 0.72 | 0.81 | 0.9 | 0.84 | THz | 0.51 | 0.53 | 0.59 | 0.7 | 0.6 | RD | −0.22% | −0.26% | −0.27% | −0.22% | −0.29% |
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Table 3. Conductance of the selected 15 points along the thickness gradients of Ag, Mg and Al2O3 using 4-point probe and THz methods respectively
0.175 6 | 0.101 8 | 0.175 6 | 0.179 8 | 0.180 1 | 0.178 1 | 0.159 1 | 0.173 4 | 0.151 0 | 0.127 0 | 0.172 1 | 0.195 6 | 0.082 5 | 0.060 6 | 0.188 0 | 0.203 7 | 0.202 1 | 0.188 0 | 0.172 0 | 0.193 3 | 0.183 8 | 0.151 9 | 0.195 7 | 0.211 3 | 0.192 1 | 0.180 7 | 0.194 9 | 0.210 0 | 0.203 3 | 0.204 8 | 0.153 7 | 0.167 7 | 0.190 4 | 0.171 9 | 0.176 1 | 0.209 0 | 0.212 5 | 0.207 9 | 0.223 0 | 0.271 7 | 0.216 5 | 0.215 5 | 0.173 4 | 0.197 7 | 0.214 8 | 0.218 4 | 0.243 9 | 0.248 5 | 0.078 9 | 0.076 9 | 0.185 2 | 0.223 4 | 0.223 9 | 0.231 5 | 0.178 1 | 0.194 4 | 0.215 4 | 0.222 9 | 0.256 1 | 0.220 7 | 0.079 2 | 0.077 7 | 0.184 0 | 0.210 7 | 0.225 7 | 0.218 7 | 0.172 2 | 0.200 9 | 0.240 6 | 0.222 1 | 0.234 2 | 0.223 9 | 0.198 5 | 0.203 5 | 0.168 5 | 0.216 8 | 0.231 4 | 0.223 0 | 0.190 2 | 0.194 4 | 0.276 3 | 0.264 5 | 0.262 1 | 0.266 8 | 0.188 6 | 0.186 7 | 0.154 3 | 0.206 5 | 0.191 7 | 0.197 8 | 0.189 1 | 0.201 3 | 0.238 9 | 0.238 7 | 0.250 1 | 0.268 3 | 0.033 8 | 0.040 6 | 0.101 5 | 0.181 3 | 0.072 5 | 0.077 6 | 0.177 3 | 0.193 6 | 0.165 3 | 0.162 8 | 0.251 2 | 0.268 7 | 0.030 5 | 0.042 4 | 0.111 4 | 0.175 8 | 0.083 2 | 0.097 4 | 0.179 6 | 0.189 6 | 0.177 3 | 0.148 5 | 0.237 7 | 0.246 1 | 0.161 6 | 0.159 5 | 0.141 7 | 0.213 6 | 0.179 1 | 0.183 2 | 0.165 4 | 0.179 8 | 0.244 8 | 0.222 8 | 0.248 9 | 0.258 8 | 0.173 6 | 0.168 9 | 0.144 9 | 0.224 3 | 0.181 8 | 0.187 6 | 0.155 9 | 0.175 1 | 0.226 5 | 0.216 7 | 0.242 6 | 0.250 5 |
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Table 4. THz conductance value of the in site discrete 12×12 Cu-Al2O3/Ag/Mg alloy sample library
Sample index | THz conductance/S | O/wt% | 263 | 0.2763 | 5.05 | 264 | 0.2645 | 6.76 | 143 | 0.1904 | 7.36 | 233 | 0.1773 | 8.03 | 234 | 0.1485 | 16.24 | 333 | 0.1114 | 11.46 | 336 | 0.0974 | 25.1 |
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Table 5. Comparison of THz conductance and the weight percentage of oxygen of representative sample spots
Sample
index
| THz
conductance/S
| O/wt% | Al/wt% | Ag/wt% | Mg/wt% | 164 | 0.127 | 8.73 | 7.79 | 5.83 | 5.58 | 154 | 0.151 9 | 4.94 | 8.19 | 4.99 | 6.51 | 144 | 0.171 9 | 7.19 | 5.75 | 5.38 | 2.13 | 134 | 0.218 4 | 6.27 | 7.47 | 10.15 | 3.79 | 124 | 0.222 9 | 6.65 | 4.65 | 10.38 | 5.11 | 114 | 0.222 1 | 8.05 | 6.93 | 9.76 | 4.27 | 264 | 0.264 5 | 6.76 | 6.39 | 6.21 | 3.65 | 254 | 0.238 7 | 7.87 | 5.98 | 5.46 | 3.56 | 244 | 0.162 8 | 12.91 | 9.6 | 7.74 | 4.26 | 234 | 0.148 5 | 16.24 | 11.85 | 10.77 | 4.61 | 224 | 0.222 8 | 5.88 | 6.55 | 11.12 | 4.23 | 214 | 0.216 7 | 6.7 | 6.03 | 10.25 | 2.8 |
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Table 6. THz conductance and weight percentages of the constituents of sample spots in column #164-#214
Measurement of electrical conductance/conductivity | Terahertz mapping | Four point probe | Detection mode | Contactless | Contact with sample | Applications[12-14] | Suitable for large samples or micro sampling(<2 mm), uniform or non-uniform | Sample area ≥10 mm2, uniform
| Conductivity mapping of graphene and carbon nanotubes, measurements of semiconductors, metallic thin films, superconductors, and metal oxides, etc.
High throughput mapping of Conductance of Cu alloy thin films in the present study
| Bulk or thin plates of conducting metals or semiconductors | Efficiency of
measurement
| High throughput
144 samples/compositions per chip/batch in the present study
| Low throughput | Information extracted | Discrete value and mapping of conductivity, complex conductivity, charge/carrier mobility; electron scattering, etc. | Discrete value of DC conductivity | Detection resolution | Three dimensional | Two dimensional | Overall results | Comparison of multiple samples with various compositions prepared in one batch under same conditions in the present study | One singular sample prepared each time |
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Table 7. Advantages of THz scanning method vs. 4-point probe