• Opto-Electronic Advances
  • Vol. 5, Issue 1, 200075 (2022)
Dongdong Yan1、†, Shuangyi Zhao1、†, Yubo Zhang2, Huaxin Wang1, and Zhigang Zang1、*
Author Affiliations
  • 1Key Laboratory of Optoelectronic Technology & Systems (Ministry of Education), Chongqing University, Chongqing 400044, China
  • 2Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
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    DOI: 10.29026/oea.2022.200075 Cite this Article
    Dongdong Yan, Shuangyi Zhao, Yubo Zhang, Huaxin Wang, Zhigang Zang. Highly efficient emission and high-CRI warm white light-emitting diodes from ligand-modified CsPbBr3 quantum dots[J]. Opto-Electronic Advances, 2022, 5(1): 200075 Copy Citation Text show less
    Relaxed surface models for simulating the adsorption of OA/DA molecules on the CsPbBr3 surface. The insets are the zoomed-in plot of the bonded regions. (a) OA on top of the pristine CsBr-terminated surface. (b) DA on top of the pristine CsBr-terminated surface. (c) OA bonding with a Br-vacancy. (d) DA bonding with a Br-vacancy. (e) The binding energies of the four interfaces.
    Fig. 1. Relaxed surface models for simulating the adsorption of OA/DA molecules on the CsPbBr3 surface. The insets are the zoomed-in plot of the bonded regions. (a) OA on top of the pristine CsBr-terminated surface. (b) DA on top of the pristine CsBr-terminated surface. (c) OA bonding with a Br-vacancy. (d) DA bonding with a Br-vacancy. (e) The binding energies of the four interfaces.
    (a) The schematic illustration of the surface in the CsPbBr3 QDs with ligand modification process. (b) Photographs of the CsPbBr3 QDs solution under the daylight (left) and UV light of 365 nm (right). (c) HRTEM images. (d) XRD patterns. (e) FTIR spectra. (f)1H-NMR spectra after washed twice.
    Fig. 2. (a) The schematic illustration of the surface in the CsPbBr3 QDs with ligand modification process. (b) Photographs of the CsPbBr3 QDs solution under the daylight (left) and UV light of 365 nm (right). (c) HRTEM images. (d) XRD patterns. (e) FTIR spectra. (f)1H-NMR spectra after washed twice.
    (a) PL spectra. (b) Absorption spectra. (c) PL decays and (d, e) AFM images of the QDs films.
    Fig. 3. (a) PL spectra. (b) Absorption spectra. (c) PL decays and (d, e) AFM images of the QDs films.
    CsPbBr3-OA QDs and CsPbBr3-DA QDs in ethanol. (a) Photographs. (b, c) PL spectra. (d) PL intensity variation of QDs solutions over 90 min.
    Fig. 4. CsPbBr3-OA QDs and CsPbBr3-DA QDs in ethanol. (a) Photographs. (b, c) PL spectra. (d) PL intensity variation of QDs solutions over 90 min.
    Photographs of CsPbBr3 QDs solution under daylight and UV light of 365 nm.
    Fig. 5. Photographs of CsPbBr3 QDs solution under daylight and UV light of 365 nm.
    (a) PL spectrum of WLEDs based on CsPbBr3-OA QDs with a CRI of 82. (b) PL spectrum of WLEDs based on CsPbBr3-DA QDs with a CRI of 93 (The inset shows photographs of the devices without and with driving voltage). (c) CIE chromaticity diagram of both WLEDs.
    Fig. 6. (a) PL spectrum of WLEDs based on CsPbBr3-OA QDs with a CRI of 82. (b) PL spectrum of WLEDs based on CsPbBr3-DA QDs with a CRI of 93 (The inset shows photographs of the devices without and with driving voltage). (c) CIE chromaticity diagram of both WLEDs.
    The thermal imaging photographs of (a) CsPbBr3-OA QDs WLEDs and (b) CsPbBr3-DA QDs WLEDs with various driving current.
    Fig. 7. The thermal imaging photographs of (a) CsPbBr3-OA QDs WLEDs and (b) CsPbBr3-DA QDs WLEDs with various driving current.
    Color-converting materialsPower efficiency (lm/W)CRICCT (K)References
    CsPbBr3 + Sr2Si5N8 : Eu2+ phosphors 65.7867.937540ref.30
    CsPbBr3:Na + K2SiF6:Mn4+(KSF) phosphors 67.375.26652ref.33
    CsPbBr3/ZrO2+ red phosphors 644743ref.75
    CsPbBr3/Cs2GeF6:Mn4+27.381.4ref.76
    CsPbBr3:Sn + CaAlSiN3:Eu2+ phosphor 29.0674.23128ref.77
    CsPb(Br1-xIx)3 YAG:Ce 19.084.73328ref.78
    CsPbBr3 QD glass + CaAlSiN3:Eu2+50.583.43674ref.79
    CsPbBr3/TDPA + K2SiF6:Mn4+63837072ref.80
    CsPbBr3/SiO2 + CsPbBr1.2I1.835.45623ref.81
    Ligand modified CsPbBr3 + AgInZnS 64.8933018This work
    Table 0. Comparison of the main optical parameters in WLEDs based on CsPbBr3 QDs.
    GroupsCRICCT (K)Efficiency (lm/W)CIE coordinates (X, Y)
    CsPbBr3-OA + AgInZnS 82609440.2(0.32, 0.35)
    CsPbBr3-DA + AgInZnS 93301864.8(0.44, 0.42)
    Table 0. Optical parameters of WLEDs based on CsPbBr3 QDs.
    Dongdong Yan, Shuangyi Zhao, Yubo Zhang, Huaxin Wang, Zhigang Zang. Highly efficient emission and high-CRI warm white light-emitting diodes from ligand-modified CsPbBr3 quantum dots[J]. Opto-Electronic Advances, 2022, 5(1): 200075
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