Effect of different growth conditions on surface morphology and optical properties of CdTe/GaAs epitaxial films

Chen-Wei ZHU; Xin-Yang LIU; Yan WU; Xin-Rong ZUO; Liu-Yan FAN; Ping-Ping CHEN; Xiao-Mei QIN

doi:10.11972/j.issn.1001-9014.2024.01.005

[1] W D Hu, Z H Ye, L Liao et al. 128 × 128 long-wavelength/mid-wavelength two-color HgCdTe infrared focal plane array detector with ultralow spectral cross talk. Optics Letter, 39, 5184-5187(2014).

[2] R Gu, J Antoszewski, W Lei et al. MBE growth of HgCdTe on GaSb substrates for application in next generation infrared detectors. Journal of Crystal Growth, 468, 216-219(2017).

[3] M Reddy, J M Peterson, T Vang et al. Molecular beam epitaxy growth of HgCdTe on large-area Si and CdZnTe substrates. Journal of electronic materials, 40, 1706-1716(2011).

[4] M F Vilela, D D Lofgreen, E P G Smith et al. LWIR HgCdTe detectors grown on Ge substrates. Journal of electronic materials, 37, 1465-1470(2008).

[5] L He, L Chen, Y Wu et al. MBE HgCdTe on Si and GaAs substrates. Journal of Crystal growth, 301, 268-272(2007).

[6] W Lei, Y L Ren, I Madni et al. Low dislocation density MBE process for CdTe-on-GaSb as an alternative substrate for HgCdTe growth. Infrared Physics & Technology, 92, 96-102(2018).

[7] R N Jacobs, J Markunas, J Pellegrino et al. Role of thermal expansion matching in CdTe heteroepitaxy on highly lattice-mismatched substrates. Journal of crystal growth, 310, 2960-2965(2008).

[8] W W Pan, R J Gu, Z K Zhang et al. Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs(211)B Substrates. Journal of Electronic Materials, 51, 4869-4883(2022).

[10] M Carmody, A Yulius, D Edwall et al. Recent progress in MBE growth of CdTe and HgCdTe on(211)B GaAs substrates. Journal of electronic materials, 41, 2719-2724(2012).

[11] W D Hu, X S Chen, Z H Ye et al. A hybrid surface passivation on HgCdTe long wave infrared detector with in-situ CdTe deposition and high-density hydrogen plasma modification. Applied Physics Letters, 99, 091101(2011).

[12] J D Benson, R N Jacobs, J K Markunas et al. Structural analysis of CdTe hetero-epitaxy on(211)Si. Journal of electronic materials, 37, 1231-1236(2008).

[13] J Schmidt, K Ortner, J E Jensen et al. Molecular beam epitaxially grown n type Hg 0.80 Cd 0.20 Te(112)B using iodine. Journal of applied physics, 91, 451-455(2002).

[14] M Rost, P Šmilauer, J Krug. Unstable epitaxy on vicinal surfaces. Surface Science, 369, 393-402(1996).

[15] J D Benson, L A Almeida, M W Carmody et al. Surface structure of molecular beam epitaxy(211)B HgCdTe. Journal of electronic materials, 36, 949-957(2007).

[16] T B T To, R Almeida, S O Ferreira et al. Roughness and correlations in the transition from island to film growth: Simulations and application to CdTe deposition. Applied Surface Science, 560, 149946(2021).

[17] P Tejedor, P Šmilauer, C Roberts et al. Surface-morphology evolution during unstable homoepitaxial growth of GaAs(110). Physical Review B, 59, 2341(1999).

[18] H Chen, H Lu, Y Nie et al. The fabrication of Te nanowires with different orientations by vacuum vapor deposition. Physics Letters A, 362, 61-65(2007).

[20] J P Faurie, A Million. Molecular beam epitaxy of II–VI compounds: CdTe. Journal of Crystal Growth, 54, 577-581(1981).

[21] P M Amirtharaj, F H Pollak. Raman scattering study of the properties and removal of excess Te on CdTe surfaces. Applied Physics Letters, 45, 789-791(1984).

[22] N V Sochinskii, M D Serrano, E Diéguez et al. Effect of thermal annealing on Te precipitates in CdTe wafers studied by Raman scattering and cathodoluminescence. Journal of applied physics, 77, 2806-2808(1995).

[23] S Özden, M M Koc. Spectroscopic and microscopic investigation of MBE-grown CdTe(211)B epitaxial thin films on GaAs(211)B substrates. Applied Nanoscience, 8, 891-903(2018).

[24] Z M Nassar, M H Yükselici, A A Bozkurt. Structural and optical properties of CdTe thin film: A detailed investigation using optical absorption, XRD, and Raman spectroscopies. physica status solidi(b), 253, 1104-1114(2016).

[25] D M Hofmann, P Omling, H G Grimmeiss et al. Identification of the chlorine A center in CdTe. Physical Review B, 45, 6247(1992).

[26] D E Cooper, J Bajaj, P R Newman. Photoluminescence spectroscopy of excitons for evaluation of high-quality CdTe crystals. Journal of crystal growth, 86, 544-551(1988).

[27] V Consonni, G Feuillet, S Renet. Spectroscopic analysis of defects in chlorine doped polycrystalline CdTe. Journal of applied physics, 99, 053502(2006).

[29] C Kraft, H Metzner, M Hädrich et al. Comprehensive photoluminescence study of chlorine activated polycrystalline cadmium telluride layers. Journal of Applied Physics, 108, 124503(2010).

[30] D P Halliday, M D G Potter, J T Mullins et al. Photoluminescence study of a bulk vapour grown CdTe crystal. Journal of crystal growth, 220, 30-38(2000).

[31] D M Hofmann, P Omling, H G Grimmeiss et al. Identification of the chlorine A center in CdTe. Physical Review B, 45, 6247(1992).