Research on local delamination failure mechanism of InSb infrared focal plane arrays detector

Jiangfeng Zhang; Xiaohan Tian; Xiaoling Zhang; Qingduan Meng

doi:10.3788/IRLA20210133

Journals >Infrared and Laser Engineering >Volume 51 >Issue 3 >Page 20210133 > Article

Infrared and Laser Engineering
Vol. 51, Issue 3, 20210133 (2022)

Research on local delamination failure mechanism of InSb infrared focal plane arrays detector

Jiangfeng Zhang¹, Xiaohan Tian¹, Xiaoling Zhang², and Qingduan Meng¹

Author Affiliations

¹School of Electrical Engineering, Henan University of Science and Technology, Luoyang 471023, China

²School of Software, Henan University of Science and Technology, Luoyang 471023, China

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DOI: 10.3788/IRLA20210133 Cite this Article

Jiangfeng Zhang, Xiaohan Tian, Xiaoling Zhang, Qingduan Meng. Research on local delamination failure mechanism of InSb infrared focal plane arrays detector[J]. Infrared and Laser Engineering, 2022, 51(3): 20210133 Copy Citation Text

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Schematic diagram of three typical crack expanding mode. (a) Mode I crack(opening mode); (b) Mode II crack(sliding mode); (c) Mode III crack(tearing type)

Fig. 1. Schematic diagram of three typical crack expanding mode. (a) Mode I crack(opening mode); (b) Mode II crack(sliding mode); (c) Mode III crack(tearing type)

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Fig. 2. Diagram of bilinear traction-separation rule of cohesive zone modeling

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Fig. 3. Two-dimensional finite element model for InSb IRFPAs

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Fig. 4. Simulated results for displacement vector sum vs. the measured photograph of InSb IRFPAs detector after the liquid nitrogen shock

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Fig. 5. Local delamination position under different mixed-mode ratios

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Fig. 6. Local delamination occupying width under different mixed-mode ratios

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Mixed-mode ratios, ω	Normal cohesive traction	Normal displacement jump	Tangential cohesive traction	Tangential displacement jump
Mixed-mode ratios, ω	σ ⁰/kPa	δ_I⁰/mm	τ⁰/kPa	δ_II⁰/mm
9∶1	116.7	1	1050	1
8∶2	257.2	1	1029	1
7∶3	414	1	975	1
6∶4	583.5	1	882.6	1
5∶5	750	1	750	1
4∶6	882.6	1	583.5	1
3∶7	975	1	414	1
2∶8	1029	1	257.2	1
1∶9	1050	1	116.7	1

Table 1. Parameter setting of cohesive zone modeling under different mixed-mode ratios

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Materials	Elastic modulus, E/GPa	Poison’s ratio, μ	Temperatures, T/K
$\alpha = 22.46 \times {10^{ - 6}} + 5.04 \times {10^{ - 8}} \times {\rm{(}}T{\rm{ - }}273{\rm{)}}$, K是开式温度单位
InSb chip	409(in plane) 123(out of plane)	0.35	77–300
Underfill	0.0002/α	0.30	77–300
Silicon ROIC	163	0.28	77–300

Table 2. Related material parameters of InSb IRFPAs

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