[1] Rogalski A, Antoszewski J, Faraone L. Third-generation infrared photodetector arrays[J]. Journal of Applied Physics,2009,105(09):091101-1.
[2] Rogalski A. New material systems for third generation infrared detectors[J]. Proc. of SPIE,2009,7388:73880J-1.
[3] Ye Z H, Wu J, He L, et al. A preliminary study on MBE-grown HgCdTe two-color FPAs[J]. Proc. of SPIE,2004,5640:66-73.
[4] Ye Z H, Quan Z J, Zhou W H, et al. An investigation on spectral-characteristic of HgCdTe two-color detector[C]. In the 2006 Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, Shanghai, 2006.
[5] Park B A, Musca C A, Antoszewski J, et al. Effect of high-density plasma process parameters on carrier transport properties in p-to-n type converted Hg0.7Cd0.3Te layer[J]. J. Electron. Mater.,2007,36(8):913-918.
[6] Haakenaaen R, Colin T, Steen H, et al. Electron beam induced current study of ion beam milling type conversion in molecular beam epitaxy vacncy-doped CdxHg1-xTe[J]. Journal of Electronic Materials,2000,29(6):849—852.
[7] Musca C A, Siliquint J F, Smith E P G, et al. Laser beam Induced current Image of reactive ion etching induced n-type doping in HgCdTe[J]. Journal of Electronic Materials, 1998, 27(6):661-667.