The results of 128×128 SW/MW two-color HgCdTe infrared focal plane arrays (IRFPAs) were presented. By B+-implantation, mesa-isolation etching, side-wall passivation, side-wall metallization and flip-chip hybridization with readout integrated circuit (ROIC),128×128 SW/MW two-color HgCdTe IRFPAs detector was fabricated from a four-layer p-p-P-N hetero-junction of Hg1-xCdxTe film grown by molecular beam epitaxy and in-situ doping techniques. The micro-mesa fill-factor of (50×50)μm2 two-color detector arrays was doubled by optimizing the wet-chemical etching process. The staring SW/MW two-color HgCdTe IRFPAs detector performed high uniformity and normal photo-electric properties. At liquid nitrogen temperature, the cut-off wavelengths of the two-color IRFPAs were 2.7μm and 4.9μm, respectively, and the peak detectivities (D*λp) were 1.42×1011cmHz1/2/W and 2.15×1011cmHz1/2/W respectively.