Numerical simulation of UV LEDs with GaN and BGaN single quantum well

Asma Belaid; Abdelkader Hamdoune

doi:10.1088/1674-4926/40/3/032802

Journals >Journal of Semiconductors >Volume 40 >Issue 3 >Page 032802 > Article

Journal of Semiconductors
Vol. 40, Issue 3, 032802 (2019)

Numerical simulation of UV LEDs with GaN and BGaN single quantum well

Asma Belaid and Abdelkader Hamdoune

Author Affiliations

Department of Electrical and Electronic Engineering, Faculty of technology, Materials and Renewable Energy Research Unit, University of Abou-Bekr Belkaid, Tlemcen, Algeria

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DOI: 10.1088/1674-4926/40/3/032802 Cite this Article

Asma Belaid, Abdelkader Hamdoune. Numerical simulation of UV LEDs with GaN and BGaN single quantum well[J]. Journal of Semiconductors, 2019, 40(3): 032802 Copy Citation Text

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Fig. 1. (Color online) Schematic structure of UV LEDs with GaN and BGaN single quantum well.

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Fig. 2. (Color online) Injection current versus forward voltage for GaN-LED and BGaN-LED.

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Fig. 3. (Color online) Spontaneous emission of GaN-LED and BGaN-LED.

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Fig. 4. (Color online) Power spectral density of GaN-LED and BGaN-LED.

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Fig. 5. (Color online) Light output power of GaN-LED and BGaN-LED.

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Fig. 6. (Color online) Flux spectral density for GaN-LED and BGaN-LED.

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Fig. 7. (Color online) Gain TE for GaN-LED and BGaN-LED.

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Fig. 8. (Color online) External quantum efficiency for GaN-LED and BGaN-LED.

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	QW thickness (nm)	7	10	15	20
GaN-LED	Peak energy (eV)	3.43	3.43	3.44	3.45
	λ (nm)	361.5	361.5	360.5	359.4
	Spontaneous emission (10²⁸ s⁻¹ cm⁻³ eV⁻¹)	1.15	1.53	2.36	3.34
BGaN-LED	Peak energy (eV)	3.43	3.36	3.36	3.36
	λ (nm)	361.5	369	369	369
	Spontaneous emission (10²⁸ s⁻¹ cm⁻³ eV⁻¹)	2.04	3.43	2.53	2.08
Ratio of spontaneous emissions		1.77	2.24	1.07	0.62
Difference between spontaneous emissions (10²⁸ s⁻¹ cm⁻³ eV⁻¹)		0.89	1.9	0.17	−1.26

Table 1. Summarized values of spontaneous emission for GaN-LED and BGaN-LED.

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	QW thickness (nm)	7	10	15	20
GaN-LED	Peak energy (eV)	3.46	3.45	3.45	3.45
	λ (nm)	358.4	359.4	359.4	359.4
	Power spectral density (W cm⁻¹ eV⁻¹)	1.61	1.81	1.84	1.93
BGaN-LED	Peak energy (eV)	3.35	3.31	3.31	3.31
	λ (nm)	370.1	374.6	374.6	374.6
	Power spectral density (W cm⁻¹ eV⁻¹)	2.4	5.6	6.1	6.7
Ratio of power spectral densities		1.49	3.09	3.31	3.47
Difference between power spectral densities (W cm⁻¹ eV⁻¹)		0.79	3.79	4.26	4.77

Table 2. Summarized values of power spectral density for GaN-LED and BGaN-LED.

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	QW thickness (nm)	7	10	15	20
GaN-LED	Peak energy (eV)	3.47	3.46	3.45	3.45
	λ (nm)	357.3	358.4	359.4	359.4
	Flux spectral density (10¹⁸ s⁻¹ cm⁻¹ eV⁻¹)	2.91	3.25	3.32	3.5
BGaN-LED	Peak energy (eV)	3.35	3.31	3.31	3.31
	λ (nm)	370.1	374.6	374.6	374.6
	Flux spectral density (10¹⁸ s⁻¹ cm⁻¹ eV⁻¹)	4.48	10.3	11.3	12.5
Ratio of flux spectral densities (s⁻¹ cm⁻¹ eV⁻¹)		1.54	3.17	3.40	3.57
Difference between flux spectral densities (10¹⁸ s⁻¹ cm⁻¹ eV⁻¹)		1.57	7.05	7.98	9

Table 3. Summarized values of flux spectral density for GaN-LED and BGaN-LED.

Asma Belaid, Abdelkader Hamdoune. Numerical simulation of UV LEDs with GaN and BGaN single quantum well[J]. Journal of Semiconductors, 2019, 40(3): 032802

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