• Chinese Physics B
  • Vol. 29, Issue 8, (2020)
Xin-Xing Fei1, Ying Wang2、†, Xin Luo1, and Cheng-Hao Yu2
Author Affiliations
  • 1College of Information and Communication Engineering, Harbin Engineering University, Harbin 5000, China
  • 2Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China
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    DOI: 10.1088/1674-1056/ab90f7 Cite this Article
    Xin-Xing Fei, Ying Wang, Xin Luo, Cheng-Hao Yu. Simulation study of high voltage GaN MISFETs with embedded PN junction[J]. Chinese Physics B, 2020, 29(8): Copy Citation Text show less
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    Xin-Xing Fei, Ying Wang, Xin Luo, Cheng-Hao Yu. Simulation study of high voltage GaN MISFETs with embedded PN junction[J]. Chinese Physics B, 2020, 29(8):
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