[1] Wang Y, Hu H F, Yu C H, Wei J T[J]. IET Power Electronics, 8, 678(2015).
[2] Sarkar T, Sapp S, Challa A[J]. 28th Annual IEEE Applied Power Electronics Conference and Exposition APEC, 507(2013).
[3] Park C, Havanur S, Shibib A, Terrill K[J]. 28th International Symposium on Power Semiconductor Devices and ICs ISPSD, 387(2016).
[4] Tong C F, Cortes I, Mawby P A, Covington J A, Morancho F[J]. IEEE Spanish Conference on Electron Devices Santiago de Compostela, 250(2009).
[5] Choi W, Son D, Young S[J]. 27th Annual IEEE Applied Power Electronics Conference and Exposition APEC, 1676(2012).
[6] Wang Y, Yu C H, Li M S, Cao F, Liu Y J[J]. IEEE Trans. Electron Devices, 64, 1455(2017).
[7] Bao J, Qi H, Zhang J, Zhang Y, Hao Z[J]. 6th IEEE Joint International Information Technology and Artificial Intelligence Conference, 245(2011).
[8] Wang L, Yang Y H[J]. Acta Phys. Sin., 59, 0571(2010).
[9] Shi L, Jia K, Sun W[J]. IEEE Trans. Electron Devices, 60, 346(2013).
[10] Tanaka A, Oritsuki Y, Kikuchihara H, Miyake M[J]. IEEE Trans. Electron Devices, 58, 2072(2011).
[11] Victory J, Pearson S, Benczkowski S, Sarkar T, Jang H, Yazdi M B, Mao K[J]. 28th International Symposium on Power Semiconductor Devices and ICs, 219(2016).
[12] Xiao Y, Victory J, Pearson S, Sarkar T, Challa A, Dagan M, Collanton P, Andreev C[J]. 34th Annual IEEE Applied Power Electronics Conference and Exposition, 508(2019).
[14] , Lu J, Song L M[J]. Fundamentals of Power Semiconductor Devices, 197-198(2013).
[15] Klein P[J]. IEEE Trans. Electron Devices, 44, 1483(1997).
[16] Daniel B J, Parikh C D, Patil M B[J]. IEEE Trans. Electron Devices, 49, 916(2002).
[18] Ren M, Chen Z, Niu B, Cao X, Li S, Li Z, Zhang B[J]. IEEE International Nanoelectronics Conference INEC, 1(2016).
[19] Chauhan Y S, Gillon R, Declercq M, Ionescu A M[J]. 37th European Solid State Device Research Conference, 426(2007).