Yi-Xun Jiang, Ming Qiao, Wen-Ming Gao, Xiao-Dong He, Jun-Bo Feng, Sen Zhang, Bo Zhang. A compact model of shield-gate trench MOSFET based on BSIM4 [J]. Acta Physica Sinica, 2020, 69(17): 177103-1
- Acta Physica Sinica
- Vol. 69, Issue 17, 177103-1 (2020)
Fig. 1. (a) Distribution of equivalent resistance of SGT MOS; (b) equivalent DC circuit of SGT MOS.
Fig. 2. (a) Distribution of capacitance and charge of SGT MOS; (b) equivalent capacitance circuit of SGT MOS.
Fig. 3. Schematic diagrams of structure before equivalence (a) and after equivalence (b).
Fig. 4. The curves of (a) transfer characteristic, (b) transconductance G m, (c) output characteristic and (d) output conductance G DS at 25 ℃.
Fig. 5. The curves of (a) transfer characteristic, (b) transconductance G m, (c) output characteristic and (d) output conductance G DS at 150 ℃.
Fig. 6. Capacitance curves on bias voltage: (a) Curve of C GD on V DS; (b) curve of C GS on V DS; (c) curve of C DS on V DS; (d) curves of C iss, C oss and C rss on V DS.
Fig. 7. Verification of switching characteristic: (a) Switching characteristic test circuit; (b) switching characteristic curve at I on = 10 A
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Table 1. The size of SGT MOS.
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