• Chinese Journal of Quantum Electronics
  • Vol. 40, Issue 1, 62 (2023)
Shiqin WEI1、*, Yao WANG1, Mengzhen WANG1, Fang WANG1, Junjie LIU1, and Yuhuai LIU1、2、3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.3969/j.issn.1007-5461.2023.01.007 Cite this Article
    WEI Shiqin, WANG Yao, WANG Mengzhen, WANG Fang, LIU Junjie, LIU Yuhuai. Performance of deep ultraviolet laser diode based on well-type ladder electron barrier[J]. Chinese Journal of Quantum Electronics, 2023, 40(1): 62 Copy Citation Text show less
    References

    [1] Hou Y F, Guo Z Y, Liu Y, et al. Performance improvement of AlGaN-based ultraviolet light-emitting diodes by amending inverted-Y-shaped barriers with alternate doped Si and Mg [J]. Superlattices and Microstructures, 2017, 107(6): 278-284.

    [2] Zhang Y Y, Zhu X L, Yin Y A, et al. Performance enhancement of near-UV light-emitting diodes with an InAlN/GaN superlattice electron-blocking layer [J]. IEEE Electron Device Letters, 2012, 33(7): 994-996.

    [3] Xing Z Q, Zhou Y J, Liu Y H, et al. Reduction of electron leakage of AlGaN-based deep ultraviolet laser diodes using an inverse-trapezoidal electron blocking layer [J]. Chinese Physics Letters, 2020, 37(2): 027302.

    [4] Tsai C L, Liu H H, Chen J W, et al. Improving the light output power of DUV-LED by introducing an intrinsic last quantum barrier interlayer on the high-quality AlN template [J]. Solid-State Electronics, 2017, 138: 84-88.

    [5] Guo W W, Xu F J, Sun Y H, et al. Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes by inserting single spike barriers [J]. Superlattices and Microstructures, 2016, 100(12): 941-946.

    [6] Zhang B B, Li S P, Li J C, et al. High Al content AlGaN based LED functional structures [J]. Journal of Xiamen University (Natural Science), 2012, 51(1): 17-21.

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    [9] Li Y, Chen S C, Tian W, et al. Advantages of AlGaN-based 310 nm UV light-emitting diodes with Al content graded AlGaN electron blocking layers [J]. IEEE Photonics Journal, 2013, 5(4): 8200309.

    [10] Velpula R T, Jain B, Bui H Q T, et al. Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure [J]. Applied Optics, 2020, 59(17): 5276-5281.

    [11] Chen H Y, Liu D Y, Li J C, et al. Development of high Al content structural Ⅲ nitrides and their applications in deep UV-LED [J]. Progress in Physics, 2013, 33(2): 43-56.

    [12] Kuo Y K, Chen F M, Chang J Y, et al. Design and optimization of electron-blocking layer in deep ultraviolet light-emitting diodes [J]. IEEE Journal of Quantum Electronics, 2019, 5(1): 1-6.

    [13] Jia H F, Yu H B, Ren Z J, et al. Nearly efficiency-droop-free AlGaN-based deep-ultraviolet light-emitting diode without electron-blocking layer [J]. Journal of Electronic Packaging, 2020, 142(3): 031115.

    WEI Shiqin, WANG Yao, WANG Mengzhen, WANG Fang, LIU Junjie, LIU Yuhuai. Performance of deep ultraviolet laser diode based on well-type ladder electron barrier[J]. Chinese Journal of Quantum Electronics, 2023, 40(1): 62
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