In order to effectively reduce the electron leakage of deep ultraviolet laser diode (DUV-LD) in the active region, a well-type ladder electron blocking layer (EBL) structure is proposed. Crosslight software is used to simulate three different structures of EBLs, namely, rectangle type, ladder type and well-type, respectively, and the energy band diagram, radiation recombination rate, electron hole concentration, P-I and V-I characteristics of the three structure devices are compared and analyzed in detail. It is found that the well-type ladder EBL has the best suppression effect on the leakage of electrons, leading to the improved optical and electrical properties of the DUV-LD device.