Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm

Frank Mehnke; Christian Kuhn; Martin Guttmann; Luca Sulmoni; Verena Montag; Johannes Glaab; Tim Wernicke; Michael Kneissl

doi:10.1364/PRJ.414315

Journals >Photonics Research >Volume 9 >Issue 6 >Page 1117 > Article

Photonics Research
Vol. 9, Issue 6, 1117 (2021)

Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm

Frank Mehnke^1、3、*, Christian Kuhn¹, Martin Guttmann¹, Luca Sulmoni¹, Verena Montag¹, Johannes Glaab², Tim Wernicke¹, and Michael Kneissl^1、2

Author Affiliations

¹Institute of Solid State Physics, Technische Universität Berlin, 10623 Berlin, Germany

²Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany

³Current address: School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

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DOI: 10.1364/PRJ.414315 Cite this Article Set citation alerts

Frank Mehnke, Christian Kuhn, Martin Guttmann, Luca Sulmoni, Verena Montag, Johannes Glaab, Tim Wernicke, Michael Kneissl. Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm[J]. Photonics Research, 2021, 9(6): 1117 Copy Citation Text

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