Realization of advanced passive silicon photonic devices with subwavelength grating structures developed by efficient inverse design

Jingshu Guo; Laiwen Yu; Hengtai Xiang; Yuqi Zhao; Chaoyue Liu; Daoxin Dai

doi:10.1117/1.APN.2.2.026005

Journals >Advanced Photonics Nexus >Volume 2 >Issue 2 >Page 026005 > Article

Advanced Photonics Nexus
Vol. 2, Issue 2, 026005 (2023)

Realization of advanced passive silicon photonic devices with subwavelength grating structures developed by efficient inverse design

Jingshu Guo^1、2、†, Laiwen Yu¹, Hengtai Xiang¹, Yuqi Zhao¹, Chaoyue Liu¹, and Daoxin Dai^{1、2、3、*}

Author Affiliations

¹Zhejiang University, College of Optical Science and Engineering, International Research Center for Advanced Photonics, State Key Laboratory for Modern Optical Instrumentation, Hangzhou, China

²Zhejiang University, Jiaxing Research Institute, Intelligent Optics & Photonics Research Center, Jiaxing Key Laboratory of Photonic Sensing & Intelligent Imaging, Jiaxing, China

³Zhejiang University, Ningbo Research Institute, Ningbo, China

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DOI: 10.1117/1.APN.2.2.026005 Cite this Article Set citation alerts

Jingshu Guo, Laiwen Yu, Hengtai Xiang, Yuqi Zhao, Chaoyue Liu, Daoxin Dai. Realization of advanced passive silicon photonic devices with subwavelength grating structures developed by efficient inverse design[J]. Advanced Photonics Nexus, 2023, 2(2): 026005 Copy Citation Text

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Proposed inverse design strategy for passive photonic devices. (a) The design framework is demonstrated by an example of a photonic device with one input port and two output ports. Here, the SWG has a period of P and a fill factor of Λ. (b) Design flow chart with manual interventions. (c) Typical manual intervention operations.

Fig. 1. Proposed inverse design strategy for passive photonic devices. (a) The design framework is demonstrated by an example of a photonic device with one input port and two output ports. Here, the SWG has a period of

P

and a fill factor of

Λ

. (b) Design flow chart with manual interventions. (c) Typical manual intervention operations.

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Inverse design of a six-channel mode (de)multiplexer on silicon. (a) Top view (xy plane), 3D view, and cross-sectional view (yz plane) at the interface between section n−1 and section n (not to scale). (b) FOM and the simulation time cost as functions of the iteration generation for air-slot and SiO2-slot devices. Inset: the milestone structures in the optimization flow. (c) and (d) The 3D FDTD simulation performance of the designed SiO2-filled mode (de)multiplexer including the transmissions (c) and the light propagation fields for different input modes at 1550 nm (d). Modes #1 to #6 are, respectively, the TE0 to TE5 modes supported by the bus waveguides (Port #1), and modes #7 to #12 are, respectively, the TE0 mode of Ports #2 to #7. Here the silicon photonic waveguides with a 220-nm-thick silicon core and a SiO2 upper-cladding are used.

Fig. 2. Inverse design of a six-channel mode (de)multiplexer on silicon. (a) Top view (

x y

plane), 3D view, and cross-sectional view (

y z

plane) at the interface between section

n - 1

and section

n

(not to scale). (b) FOM and the simulation time cost as functions of the iteration generation for air-slot and

{SiO}_{2}

-slot devices. Inset: the milestone structures in the optimization flow. (c) and (d) The 3D FDTD simulation performance of the designed

{SiO}_{2}

-filled mode (de)multiplexer including the transmissions (c) and the light propagation fields for different input modes at 1550 nm (d). Modes #1 to #6 are, respectively, the

{TE}_{0}

{TE}_{5}

modes supported by the bus waveguides (Port #1), and modes #7 to #12 are, respectively, the

{TE}_{0}

mode of Ports #2 to #7. Here the silicon photonic waveguides with a 220-nm-thick silicon core and a

{SiO}_{2}

upper-cladding are used.

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Fig. 3. Fabricated devices and measured results. (a) Microscope picture for the fabricated silicon PIC consisting of a pair of mode (de)multiplexers with six input ports (

I_{TE 0} - I_{TE 5}

) and six output ports (

O_{TE 0} - O_{TE 5}

). (b) SEM image of a mode (de)multiplexer. (c) Normalized transmissions of different port pairs.

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Fig. 4. Inverse design of a 90 deg hybrid on silicon. (a) The 3D schematic diagram. LO, local oscillator. (b)–(f) The simulated performances of the final design (

{SiO}_{2}

slot device): the simulated light propagation fields with varied phase difference

Δ θ_{21}

between Ports 2 and 1 at (b) 1550 nm, (c) the transmissions, (d) CMMRs, (e) the Els, and (f) phase errors (f). Here the transmission is given by the

S

parameter (i.e.,

S_{i j}

channel is given by

20 \log_{10} | S_{i j} |

). CMMR, common mode rejection ratio.

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Fig. 5. Experimental results of the fabricated 90 deg hybrid. (a) Measured transmissions. (b) Measured CMMRs. (c) Measured ELs. (d) The port-to-port optical transmission are spectra measured by the phase-test PIC. (e) Phase error extracted from the measured results of the phase-test PIC.

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Fig. 6. The inverse-designed two-channel wavelength multiplexer on silicon. (a) 3D schematic diagram. (b) Simulated light propagation in the designed devices. (c) Calculated transmissions. (d) Measured transmissions. Inset: SEM image of the fabricated wavelength demultiplexer.

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Device	Type, year	Footprint ( $μ m^{2}$ )	EL (dB)	CT/ER/CMMR/IM (dB)	Bandwidth (nm)^a	Special indicators^b	Ref.
Sim.	Exp.	Sim.	Exp.	Sim.	Exp.	Sim.	Exp.
Mode (de)multiplexer	Dual-core adiabatic tapers, 2018	∼33×471	NA	<1.8	NA	CT<-14	140	80	10 Channels (5TE+5TM)	37
Tilt waveguide junctions, 2022	2 × 50	<1	<1.29	CT<-17.4	CT<-14.4	60	60	4 Channels	43
ANN-Inverse design, 2021	2 × 17.5	<1.1^{@1.55 μm)}	<2.4^{@1.55 μm}	CT<-10	CT<-10	90	70	3 Channels	44
Inverse design, 2020	5.4 × 6	<2 (∼1^{@1.55 μm)}	<1.5	CT<-18	CT<-16	60	60	4 Channels	13
Inverse design, 2021	6.5 × 6.5	NA	0∼10	NA	CT<-14	NA	60	4 Channels	14
Inverse design, 2022	4.8 × 4.8	<5 (<1.1^{@1.55 μm})	<2.5	CT<-12	CT<-12	100	40	4 Channels	12
Inverse design	7.5 × 18	<1.03	<∼1	CT<-15.12	CT<-10	100	90	6 Channels	This work
90 deg hybrid	MMIs + phase shifter, 2017	21.6 × 27.9	<0.45	<0.5	CMMR>30	CMMR>30	35	35	-	PE < 3	29
Inverse design, 2022	4.8 × 4.2	<2 (<0.5^@1.55 μm)	<2.1^a)	−2∼2.4 (IM)	∼±2 (IM)	100	40	PE < 70 (<6.5^{@1.55 μm})	PE < 27 (<10^@1.55 μm)	12
Inverse design	4.71 × 13.03	<0.96	<1	CMMR > 26.33	CMMR>10.2	40	40	PE<4.6	PE<14.9 (<5^@1.55 μm)	This work
IM < 0.37	IM=-2.82∼1.5
WDM	Inverse design, 2015	2.8 × 2.8	∼1.7^{@1.3/1.55 μm}	>1.8/2.4	ER >∼ 13	ER>11	100/170	100/170	2 Channels, Flat-top	9
Inverse design, 2018	5.5 × 4.5	1.56/1.68/1.35	2.82/2.55/2.29	ER > 15	ER>10.7	NA	NA	3 Channels, Non-flat-top	41
Inverse design, 2019	1.4 × 1.8	0.36/0.09/0.76	1.87/1.49/3.47	ER > 6.23	ER>8.51	NA	NA	3 Channels, Non-flat-top	33
Inverse design, 2020	2.8 × 2.8	0.3/0.54	NA	ER > 15.29	NA	NA	NA	2 Channels, Non-flat-top	42
4.6 × 2.8	∼1.9	ER = ∼ 13	4 Channels, Non-flat-top
6.95 × 2.8	0.31∼2.12	ER > 15.86	6 Channels, Non-flat-top
Inverse design, 2022	6.2 × 5.4	∼0.8	1.2	ER > 17	ER > 15	>30	>30	3 Channels, Flat-top	40
Inverse design	3.07 × 12.46	<1	<1	ER > 10	ER > 10	80/140	88/109	2 Channels, Flat-top	This work