[1] Nakamura S ,Fasol G.The Blue Laser Diode[M].New York:Springe, 1997.
[2] Carrano J C, Li T, Grudowski P A, et al. Comprehensive characterization of metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN[J].J Appl Phys,1998, 83(11):6148-6160.
[3] Soole J B D, Schumacher H. InGaAs metal-semiconductormetalphotodetectors for long wavelength optical communications[J].IEEE J Quantum Electron,1991,27(3):737-752.
[4] Liu Q Z, Lau S S. A review of the metal-GaN contact technology [J]. Solid-State Electron, 1998, 42(5): 677 -691.
[5] Sze S M,Coleman D J,Loya A. Current transport in metal-semiconductor-metal (MSM) structures[J]. Solid-State Electron, 1971,14(12): 1209-1218.
[6] Hacke P,Detchprohm T,Hiramatsu K,et al. Schottky barrier on ntype GaN grown by hydride vapor phase epitaxy[J].Appl Phys Lett, 1993, 63(19):2676-2678.
[7] Strite S ,Morkoc H. GaN, A1N and InN: A review[J]. J Vac Sci Technol B,1992, 10(4):1237-1266.
[8] Perlin P,Litwin-Staszewska E,Suchanek B, et al.Determination of the effective mass of GaN from infrared reflectivity and Hall effect [J].Appl Phys Lett, 1996, 68(8):1114-1116.
[10] Kang Yong,Li Xiangyang,Gong Haimei, et al. Study on Au diffusion in 0001 undoped wurtzite GaN[J].Semicond Sci Technol,2003, 18(7): 607-610.
[11] Chisholm J A, Bristowe P D. Formation energies of metal impurities in GaN[J]. Computational Materials Science, 2001,2(1-2):73 -77.
[13] Schmitz A C, Ping A T, Khan M Asif, et al. High temperature characteristics of Pd Schottky contacts on n-type GaN[J]. Electron Lett, 1996, 32(19):1832-1833.
