Defect engineering in two-dimensional materials

Jie Jiang; Zhenhua Ni

doi:10.1088/1674-4926/40/7/070403

Journals >Journal of Semiconductors >Volume 40 >Issue 7 >Page 070403 > Article

Journal of Semiconductors
Vol. 40, Issue 7, 070403 (2019)

Defect engineering in two-dimensional materials

Jie Jiang and Zhenhua Ni

Author Affiliations

School of Physics, Southeast University, Nanjing 211189, China

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DOI: 10.1088/1674-4926/40/7/070403 Cite this Article

Jie Jiang, Zhenhua Ni. Defect engineering in two-dimensional materials[J]. Journal of Semiconductors, 2019, 40(7): 070403 Copy Citation Text

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(Color online) Schematic diagram of carrier recombination and trapping kinetics (left) and transient response of as-prepared and H2PP decorated ReS2 photoconductor (right)[7].

Fig. 1. (Color online) Schematic diagram of carrier recombination and trapping kinetics (left) and transient response of as-prepared and H₂PP decorated ReS₂ photoconductor (right)^[7].

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Jie Jiang, Zhenhua Ni. Defect engineering in two-dimensional materials[J]. Journal of Semiconductors, 2019, 40(7): 070403

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