Compared to the front-illuminated structure, the back-illuminated complementary metal oxide semiconductor (CMOS) image sensor significantly improves the shooting effect in low light environments, and lasers have different interference and damage mechanisms on different sensor structures. To investigate the impact of lasers on back-illuminated CMOS image sensors, experiments were conducted using a 1 064 nm continuous laser to study the interference and damage. In the interference experiment, saturation and over saturation phenomena were observed. When the laser power density exceeded 1.39×10^?2 W/cm², saturation occurred, and when it exceeded 1.03×10⁴ W/cm², over saturation occurred. In the damage experiment, spot damage, crossline damage, surface damage, and blindness were observed. When the power density exceeded 1.35×10⁶ W/cm², spot damage occurred, and when it exceeded 1.74×10⁶ W/cm², crossline damage occurred. When the power density exceeded 1.65×10⁷ W/cm², surface damage occurred. If the laser power was further increased, the detector ultimately became blind. The back-illuminated structure circuit is deeper than the front-illuminated structure and requires higher laser power for damage, Therefore, it has stronger laser resistance.