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    Journals >Journal of Infrared and Millimeter Waves >Volume 41 >Issue 2 >Page 425 > Article
    • Journal of Infrared and Millimeter Waves
    • Vol. 41, Issue 2, 425 (2022)
    The influence of Hg vacancy control of HgCdTe materials with different passivation layers through thermal annealing
    Chuan SHEN1, Yang-Rong LIU1, Rui-Yun SUN1, Shun-Dong BU1, Lu CHEN1、2、*, and Li HE1
    Author Affiliations
  • 1Key Laboratory of Infrared Imaging Materials and Detectors，Shanghai Institute of Technical Physics，Chinese Academy of Sciences，Shanghai 200083，China
  • 2Hangzhou Institute for Advanced Study，University of Chinese Academy of Sciences，Hangzhou 310024，China
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    DOI: 10.11972/j.issn.1001-9014.2022.02.007 Cite this Article
    Chuan SHEN, Yang-Rong LIU, Rui-Yun SUN, Shun-Dong BU, Lu CHEN, Li HE. The influence of Hg vacancy control of HgCdTe materials with different passivation layers through thermal annealing[J]. Journal of Infrared and Millimeter Waves, 2022, 41(2): 425 Copy Citation Text show less
    References

    [1] A Rogalski. Recent progress in infrared detector technologies. Infrared Physics & Technology, 54, 136-154(2011).

    [2] W Qiu, W Hu. Laser beam induced current microscopy and photocurrent mapping for junction characterization of infrared photodetectors. Science China-Physics Mechanics & Astronomy, 58, 027001(2015).

    [3] V Gopal, W Qiu, W Hu. Modelling of illuminated current-voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors. Journal of Applied Physics, 116, 184503(2014).

    [4] J Wenus, J Rutkowski, A Rogalski. Analysis of VLWIR HgCdTe photodiode performance. Opto-Electronics Review, 11, 143-149(2003).

    [5] A S Gilmore, J Bangs, A Gerrish. VLWIR HgCdTe detector current-voltage analysis. Journal of Electronic Materials, 35, 1403-1410(2006).

    [6] A I D'Souza, R E Dewames, P S Wijewarnasuriya et al. Current mechanisms in VLWIR Hg1-xCdxTe photodiodes. Journal of Electronic Materials, 30, 585-589(2001).

    [7] G L Destefanis. Electrical doping of HgCdTe by ion-implantation and heat-treatment. J. Cryst Growth, 86, 700-22(1988).

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    Chuan SHEN, Yang-Rong LIU, Rui-Yun SUN, Shun-Dong BU, Lu CHEN, Li HE. The influence of Hg vacancy control of HgCdTe materials with different passivation layers through thermal annealing[J]. Journal of Infrared and Millimeter Waves, 2022, 41(2): 425
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