• Journal of Infrared and Millimeter Waves
  • Vol. 41, Issue 2, 425 (2022)
Chuan SHEN1, Yang-Rong LIU1, Rui-Yun SUN1, Shun-Dong BU1, Lu CHEN1、2、*, and Li HE1
Author Affiliations
  • 1Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
  • 2Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China
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    DOI: 10.11972/j.issn.1001-9014.2022.02.007 Cite this Article
    Chuan SHEN, Yang-Rong LIU, Rui-Yun SUN, Shun-Dong BU, Lu CHEN, Li HE. The influence of Hg vacancy control of HgCdTe materials with different passivation layers through thermal annealing[J]. Journal of Infrared and Millimeter Waves, 2022, 41(2): 425 Copy Citation Text show less
    Cross section of HgCdTe with passivation layers
    Fig. 1. Cross section of HgCdTe with passivation layers
    Schematic diagram of thermal annealing under Hg pressure:A is HgCdTe sample,B is annealing source(With Hg),C is Quartz tube
    Fig. 2. Schematic diagram of thermal annealing under Hg pressure:A is HgCdTe sample,B is annealing source(With Hg),C is Quartz tube
    R0 of HgCdTe devices with different Hg concentration
    Fig. 3. R0 of HgCdTe devices with different Hg concentration
    Cd composition of HgCdTe epitaxial materials with different passivation layers
    Fig. 4. Cd composition of HgCdTe epitaxial materials with different passivation layers
    XRD rocking curves of sample A and sample B
    Fig. 5. XRD rocking curves of sample A and sample B
    Hall concentration(77 K)of Sample B with different depth
    Fig. 6. Hall concentration(77 K)of Sample B with different depth
    Hg concentration in the ZnTe passivation layer before and after annealing
    Fig. 7. Hg concentration in the ZnTe passivation layer before and after annealing
    Hg concentration in the CdTe passivation layer before and after annealing
    Fig. 8. Hg concentration in the CdTe passivation layer before and after annealing
    样品编号77 K霍尔浓度/cm-3

    77 K迁移率

    /(cm2/Vs)

    样品A3.7×1015488
    样品B2.78×1016159
    样品C3.5×1015410
    Table 1. 77K Hg vacancy concentration of HgCdTe with different passivation layers after thermal annealing
    样品分类拟合Ea值/eV
    Destefanis结果0.5
    CdTe钝化层样品0.53
    ZnTe钝化层样品0.21
    Table 2. Ea values of HgCdTe samples with different structures
    Chuan SHEN, Yang-Rong LIU, Rui-Yun SUN, Shun-Dong BU, Lu CHEN, Li HE. The influence of Hg vacancy control of HgCdTe materials with different passivation layers through thermal annealing[J]. Journal of Infrared and Millimeter Waves, 2022, 41(2): 425
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