The microresonator-based soliton microcomb has shown a promising future in many applications. In this work, we report the fabrication of high quality (Q) Si3N4 microring resonators for soliton microcomb generation. By developing the fabrication process with crack isolation trenches and annealing, we can deposit thick stoichiometric Si3N4 film of 800 nm without cracks in the central area. The highest intrinsic Q of the Si3N4 microring obtained in our experiments is about 6×106, corresponding to a propagation loss as low as 0.058 dBm/cm. With such a high Q film, we fabricate microrings with the anomalous dispersion and demonstrate the generation of soliton microcombs with 100 mW on-chip pump power, with an optical parametric oscillation threshold of only 13.4 mW. Our Si3N4 integrated chip provides an ideal platform for researches and applications of nonlinear photonics and integrated photonics.