• Journal of Semiconductors
  • Vol. 40, Issue 2, 020401 (2019)
Jianlu Wang
Author Affiliations
  • National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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    DOI: 10.1088/1674-4926/40/2/020401 Cite this Article
    Jianlu Wang. A novel spin-FET based on 2D antiferromagnet[J]. Journal of Semiconductors, 2019, 40(2): 020401 Copy Citation Text show less
    References

    [1] C Gong, L Li, Z Li et al. Discovery of intrinsic ferromagnetism in two-dimensional vander Waals crystals. Nature, 546, 265(2017).

    [2] S Gong, C Gong, Y Sun et al. Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors. PNAS, 115, 8511(2018).

    [3] S Datta, B Das. Electronic analog of the electro-optic modulator. Appl Phys Lett, 56, 655(1990).

    Jianlu Wang. A novel spin-FET based on 2D antiferromagnet[J]. Journal of Semiconductors, 2019, 40(2): 020401
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