• Laser & Optoelectronics Progress
  • Vol. 56, Issue 6, 060003 (2019)
Jie Fan*, Chunyang Gong, Jingjing Yang, Yonggang Zou, and Xiaohui Ma
Author Affiliations
  • State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin 130022, China
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    DOI: 10.3788/LOP56.060003 Cite this Article Set citation alerts
    Jie Fan, Chunyang Gong, Jingjing Yang, Yonggang Zou, Xiaohui Ma. Research Progress of Distributed Bragg Reflector Semiconductor Lasers[J]. Laser & Optoelectronics Progress, 2019, 56(6): 060003 Copy Citation Text show less
    Structure of typical DBR-LD
    Fig. 1. Structure of typical DBR-LD
    Reflectance spectrum of DBR grating
    Fig. 2. Reflectance spectrum of DBR grating
    Linewidth characteristics of single longitudinal mode DBR-LD at 1064 nm[24]
    Fig. 3. Linewidth characteristics of single longitudinal mode DBR-LD at 1064 nm[24]
    Schematic of epitaxial structure of 635 nm DBR-LD [25]
    Fig. 4. Schematic of epitaxial structure of 635 nm DBR-LD [25]
    3D structural diagram of DBR laser[29]
    Fig. 5. 3D structural diagram of DBR laser[29]
    DBR grating used for providing both high-reflection and optical confinement[31]
    Fig. 6. DBR grating used for providing both high-reflection and optical confinement[31]
    3D structural diagram of grooved single-mode laser[32]
    Fig. 7. 3D structural diagram of grooved single-mode laser[32]
    Ridge-curved waveguide grooved laser[33]. (a) 3D structural diagram; (b) SEM image of etched groove
    Fig. 8. Ridge-curved waveguide grooved laser[33]. (a) 3D structural diagram; (b) SEM image of etched groove
    Working principle of resonant coupling cavity[35]
    Fig. 9. Working principle of resonant coupling cavity[35]
    Structural diagram of dual-wavelength DBR-LD[35]
    Fig. 10. Structural diagram of dual-wavelength DBR-LD[35]
    Dual-wavelength high-order DBR-LD [36]. (a) Structural diagram; (b) spectra at different injection currents
    Fig. 11. Dual-wavelength high-order DBR-LD [36]. (a) Structural diagram; (b) spectra at different injection currents
    Structural diagram of dual-mode DBR-LD[37]
    Fig. 12. Structural diagram of dual-mode DBR-LD[37]
    Structural diagram of Y-branched dual-wavelength laser[38]
    Fig. 13. Structural diagram of Y-branched dual-wavelength laser[38]
    Two different types of dual-wavelength diode lasers[41]. (a) Two DBR-RW-LD mini-array; (b) Y-branched DBR laser
    Fig. 14. Two different types of dual-wavelength diode lasers[41]. (a) Two DBR-RW-LD mini-array; (b) Y-branched DBR laser
    Structural diagram of tunable DBR-LD [44]
    Fig. 15. Structural diagram of tunable DBR-LD [44]
    Butt-joint interface between gain section and DBR grating section[45]
    Fig. 16. Butt-joint interface between gain section and DBR grating section[45]
    Two-stage DBR-LD [47]. (a) Schematic; (b) spectrum of 13-channel wavelength measured when only DBR current is tuned
    Fig. 17. Two-stage DBR-LD [47]. (a) Schematic; (b) spectrum of 13-channel wavelength measured when only DBR current is tuned
    Structural distribution of SG
    Fig. 18. Structural distribution of SG
    SG with linear structure[59]
    Fig. 19. SG with linear structure[59]
    P-U-I curve when DBR grating tapered LD structure is included[61]
    Fig. 20. P-U-I curve when DBR grating tapered LD structure is included[61]
    Lateral layout of DBR tapered LD with tapered grating[64]
    Fig. 21. Lateral layout of DBR tapered LD with tapered grating[64]
    Three lateral layouts of DBR tapered lasers[65]
    Fig. 22. Three lateral layouts of DBR tapered lasers[65]
    YearsUnitLasercharacteristicsTuningmethodTuningrange /nmTuning speed
    2012[48]CorningIncorporated1060 nmcurrent injection in gratingregion and phase region9 nm·W-1
    2014[45]Institute of Semiconductors,Chinese Academy of Sciences1530 nmcombining current injection andthermal tuning in grating region17.60.086 nm·mA-10.076 nm·℃-1
    2015[59]NanjingUniversity1551.8 nmcurrent injection intoSG-DBR grating region40
    2016[58]National TaiwanUniversity4.7 μmcurrent injection into rearSG-DBR grating region190
    2017[47]Institute of Semiconductors,Chinese Academy of Sciences1450 nmcurrent tuning forDBR grating regions120.2 nm·mA-1
    2017[55]GermanFBH Institute970 nmcurrent tuning of rearSG-DBR grating region20.7
    Table 1. Research results of tunable DBR-LD at home and abroad
    Jie Fan, Chunyang Gong, Jingjing Yang, Yonggang Zou, Xiaohui Ma. Research Progress of Distributed Bragg Reflector Semiconductor Lasers[J]. Laser & Optoelectronics Progress, 2019, 56(6): 060003
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