• Acta Optica Sinica
  • Vol. 27, Issue 6, 1018 (2007)
[in Chinese]*, [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese]. Visible/Near IR Double Wave Band Sensor Based on Vertically Stacked Structure[J]. Acta Optica Sinica, 2007, 27(6): 1018 Copy Citation Text show less
    References

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    [3] D. Knipp, R. A. Street, H. Stiebig et al.. Vertically integrated thin film color sensor arrays for imaging applications[J]. Optics Express, 2006, 14(8): 3106~3113

    [4] S. Mohajerzadeh, A. Nathan, C. R. Selvakumar. Numerical simulation of a p-n-p-n color sensor for simultaneous color detection[J]. Sensors and Actuators A, 1994, 44(2): 119~124

    [5] David L. Gilblom, Sang Keun Yoo, Peter Ventura. Real-time color imaging with a CMOS sensor having stacked photodiodes[C]. Proc. SPIE, 2004, 5210: 105~115

    [6] E. D. Palik. Handbook of Optical Constants of Solids[M]. New York: Academic Press, 1985

    [7] David L. Gilblom, Snag Keun Yoo. Infrared and ultraviolet imaging with a CMOS sensor having layered photodiodes[C]. Proc. SPIE, 2004, 5301: 186~192

    [8] Mamoru Kurata. Numerical Analysis for Semiconductor Devices[M]. Lexington: D. C. Heath and Company, 1982. 13~14

    [9] Siegfried Selberherr. Analysis and Simulation of Semiconductor Devices[M]. New York: Springer, 1984. 10~11

    CLP Journals

    [1] Chen Yuan, Xu Zhihai, Feng Huajun. Vertically Integrated Diode for CMOS Color Image Sensor and Its Colorimetric Characterization[J]. Acta Optica Sinica, 2009, 29(5): 1264

    [in Chinese], [in Chinese], [in Chinese]. Visible/Near IR Double Wave Band Sensor Based on Vertically Stacked Structure[J]. Acta Optica Sinica, 2007, 27(6): 1018
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