A novel double wave band sensor based on vertically stacked structure is proposed. It provides the possibility to obtain images in visible/near IR spectrum simultaneously. Its basic principle is to use silicon material's differences of penetration depths of electromagnetic waves with different wavelengths, i.e., visible light with short wavelength mainly absorbed at surface while near IR light with longer wavelength mainly absorbed at deeper location. Through extraction of photocarriers at different depths, images corresponding to their spectrums are obtained. The analysis of results from numerical simulation shows that the device with structure parameters of D1=2 μm, D2=18 μm give best visible/near-IR response with peak values at 550 nm and 1000 nm in the imaging wavelength of 400～1200 nm.