Polycrystalline Vanadium Oxides thin films deposited on Si(110) and quartz substrates for thermo-sensitive material of uncooled IR detector arrays were fabricated by ion beam sputtering deposition and oxide process.SEM photography indicates that VO x thin films with acerose crystal constructor are smooth, compact and uniform. The test result shows that the square resistance and the temperature coefficient of resistance(TCR) of the VO x thin film are 50KΩ and -0.021K^-1 at 20℃, respectively.