• Photonics Research
  • Vol. 7, Issue 10, 1161 (2019)
Zhao Shi1,†, He Ding2,†, Hao Hong3, Dali Cheng1..., Kamran Rajabi1, Jian Yang2, Yongtian Wang2, Lai Wang1, Yi Luo1, Kaihui Liu3 and Xing Sheng1,*|Show fewer author(s)
Author Affiliations
  • 1Department of Electronic Engineering and Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing 100084, China
  • 2Beijing Engineering Research Center of Mixed Reality and Advanced Display, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
  • 3State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, and School of Physics, Peking University, Beijing 100871, China
  • show less
    DOI: 10.1364/PRJ.7.001161 Cite this Article Set citation alerts
    Zhao Shi, He Ding, Hao Hong, Dali Cheng, Kamran Rajabi, Jian Yang, Yongtian Wang, Lai Wang, Yi Luo, Kaihui Liu, Xing Sheng, "Ultrafast and low-power optoelectronic infrared-to-visible upconversion devices," Photonics Res. 7, 1161 (2019) Copy Citation Text show less

    Abstract

    Photon upconversion with transformation of low-energy photons to high-energy photons has been widely studied and especially applied in biomedicine for sensing, stimulation, and imaging. Conventional upconversion materials rely on nonlinear luminescence processes, suffering from long decay lifetime or high excitation power. Here, we present a microscale, optoelectronic infrared-to-visible upconversion device design that can be excited at low power (1100mW/cm2). By manipulating device geometry, illumination position, and temperature, the device luminescence decay lifetime can be tuned from tens to hundreds of nanoseconds. Based on carrier transportation and circuit dynamics, theoretical models are established to understand the transient behaviors. Compared with other mechanisms, the optoelectronic upconversion approach demonstrates the shortest luminescence lifetime with the lowest required excitation power, owing to its unique photon–electron conversion process. These features are expected to empower the device with essential capabilities for versatile applications as high-performance light emitters.
    τtotal=τtrans2+τRC2.(1)

    View in Article

    Zhao Shi, He Ding, Hao Hong, Dali Cheng, Kamran Rajabi, Jian Yang, Yongtian Wang, Lai Wang, Yi Luo, Kaihui Liu, Xing Sheng, "Ultrafast and low-power optoelectronic infrared-to-visible upconversion devices," Photonics Res. 7, 1161 (2019)
    Download Citation