• Journal of Semiconductors
  • Vol. 44, Issue 1, 010401 (2023)
Xin Lu*
Author Affiliations
  • Department of Physics and Engineering Physics, Tulane University, New Orleans, USA
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    DOI: 10.1088/1674-4926/44/1/010401 Cite this Article
    Xin Lu. Single photon emitters originating from donor–acceptor pairs[J]. Journal of Semiconductors, 2023, 44(1): 010401 Copy Citation Text show less
    References

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    [9] X H Xu, Z O Martin, D Sychev et al. Creating quantum emitters in hexagonal boron nitride deterministically on chip-compatible substrates. Nano Lett, 21, 8182(2021).

    [10] F Hayee, L Yu, J L Zhang et al. Revealing multiple classes of stable quantum emitters in hexagonal boron nitride with correlated optical and electron microscopy. Nat Mater, 19, 534(2020).

    [11] Q H Tan, J M Lai, X L Liu et al. Donor-acceptor pair quantum emitters in hexagonal boron nitride. Nano Lett, 22, 1331(2022).

    [12] P Auburger, A Gali. Towardsab initio identification of paramagnetic substitutional carbon defects in hexagonal boron nitride acting as quantum bits. Phys Rev B, 104, 075410(2021).

    Xin Lu. Single photon emitters originating from donor–acceptor pairs[J]. Journal of Semiconductors, 2023, 44(1): 010401
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