Transmission Spectrum of Multilayer AlGaN Thin Film on Sapphire Substrate

Haojie Li; Yan Zhang

doi:10.3788/AOS202040.1931002

Journals >Acta Optica Sinica >Volume 40 >Issue 19 >Page 1931002 > Article

Acta Optica Sinica
Vol. 40, Issue 19, 1931002 (2020)

Transmission Spectrum of Multilayer AlGaN Thin Film on Sapphire Substrate

Haojie Li^1、2 and Yan Zhang^1、*

Author Affiliations

¹Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

²University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.3788/AOS202040.1931002 Cite this Article Set citation alerts

Haojie Li, Yan Zhang. Transmission Spectrum of Multilayer AlGaN Thin Film on Sapphire Substrate[J]. Acta Optica Sinica, 2020, 40(19): 1931002 Copy Citation Text

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Optical measurement results of #840, #844, #848 samples and sapphire. (a) Measurement results of sapphire under incident angle of 60°; (b) transmission spectra of #840、#844、#848 samples and sapphire

Fig. 1. Optical measurement results of #840, #844, #848 samples and sapphire. (a) Measurement results of sapphire under incident angle of 60°; (b) transmission spectra of #840、#844、#848 samples and sapphire

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$Optical parameter fitting results of sapphire. (a) Complex refractive index and extinction coefficient of sapphire; (b) transmission spectra under different conditions$

Fig. 2. Optical parameter fitting results of sapphire. (a) Complex refractive index and extinction coefficient of sapphire; (b) transmission spectra under different conditions

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$Refractive index of full composition AlGaN. (a) Result comparison of proposed refractive index model (line) and that in Ref. [19] (dot); (b) simple verification in full composition range$

Fig. 3. Refractive index of full composition AlGaN. (a) Result comparison of proposed refractive index model (line) and that in Ref. [19] (dot); (b) simple verification in full composition range

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Fig. 4. Absorption coefficient of AlGaN versus photon energy

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Fig. 5. Absorption coefficient of full composition AlGaN versus photon energy. (a) Result comparison of corrected absorption coefficient model (line) and that in Ref. [19] (dot); (b) simple verification in full composition range

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Fig. 6. Transmission spectra of different AlGaN. (a) Different thicknesses; (b) different compositions

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Fig. 7. Transmission spectra of structures A, B and C

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Fig. 8. Transmission spectra of #840

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Fig. 9. Transmission spectra of #844

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Fig. 10. Transmission spectra of #848

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Layer No.	Material	Doping type	Thickness /μm	Al component
1	GaN	p	0.20	0
2	GaN	i	0.20	0
3	Al_xGa_1-_xN	i	0.05	[0,0.55]
4	Al_0.55Ga_0.45N	n	1.00	0.55
5	Al_0.55Ga_0.45N	i	1.00	0.55

Table 1. Designed structure of # 840

Layer No.	Material	Thickness /μm	Atomic fractionof Al
1	GaN	0.15	0.021
2	AlGaN	0.04	0.230
3	AlGaN	0.37	0.420
4	AlGaN	0.05	0.490
5	AlGaN	2.48	0.550
6	AlGaN	0.05	0.650
7	AlGaN	0.05	0.780
8	AlN	1.14	1.000

Table 1. 1 Parameters of fitting structure 844-1

Layer No.	Material	Thickness /μm	Atomic fractionof Al
1	GaN	0.36	0.035
2	AlGaN	0.02	0.330
3	AlGaN	0.04	0.400
4	AlGaN	2.00	0.550
5	AlGaN	0.04	0.650
6	AlGaN	0.02	0.790
7	AlN	1.68	1.000

Table 1. 0 Parameters of fitting structures 840-3 and 840-4

Layer No.	Material	Thickness /μm	Atomic fractionof Al
1	GaN	0.27	0.02
2	AlGaN	0.05	0.17
3	AlGaN	0.05	0.28
4	ZlGaN	0.39	0.47
5	AlGaN	0.02	0.53
6	AlGaN	2.37	0.60
7	AlGaN	0.05	0.66
8	AlGaN	0.05	0.78
9	AlN	0.50	1.00

Table 1. 2 Parameters of fitting structure 848-1

Layer No.	Material	Doping type	Thickness /μm	Al component
1	GaN	p	0.20	0
2	Al_0.2Ga_0.8N	p	0.04	0.20
3	Al_0.42Ga_0.58N	i	0.14	0.42
4	Al_0.42Ga_0.58N	n	0.06	0.42
5	Al_0.42Ga_0.58N	i	0.18	0.42
6	Al_xGa_1-_xN	n	0.05	[0.42,0.55]
7	Al_0.55Ga_0.45N	n	2.00	0.55
8	Al_0.55Ga_0.45N	i	0.50	0.55

Table 2. Designed structure of # 844

Layer No.	Material	Doping type	Thickness /μm	Al component
1	GaN	p	0.30	0
2	Al_xGa_1-_xN	p	0.05	[0,0.42]
3	Al_0.42Ga_0.58N	i	0.14	0.42
4	Al_0.42Ga_0.58N	n	0.06	0.42
5	Al_0.42Ga_0.58N	i	0.18	0.42
6	Al_xGa_1-_xN	n	0.05	[0.42,0.55]
7	Al_0.55Ga_0.45N	n	2.50	0.55
8	Al_0.55Ga_0.45N	i	1.00	0.55

Table 3. Designed structure of # 848

Sample No.	FWHM /(″)
Sample No.	(002)	(102)
#840	397	902
#844	434	597
#848	462	649

Table 4. FWHMs of #840、#844 and#848

Layer No.	Material	Thickness /μm	Atomic fractionof Al
1	AlGaN	0.6	0.6

Table 5. Parameters of structure A

Layer No.	Material	Thickness /μm	Atomic fractionof Al
1	AlGaN	0.03	0.3
2	AlGaN	0.57	0.6

Table 6. Parameters of structure B

Layer No.	Material	Thickness /μm	Atomic fractionof Al
1	AlGaN	0.01	0.1
2	AlGaN	0.01	0.3
3	AlGaN	0.01	0.5
4	AlGaN	0.57	0.6

Table 7. Parameters of structure C

Layer No.	Material	Thickness /μm	Atomic fractionof Al
1	GaN	0.36	0.035

Table 8. Parameters of fitting structure 840-1

Layer No.	Material	Thickness /μm	Atomic fractionof Al
1	GaN	0.36	0.035
2	AlGaN	2.12	0.550
3	AlN	1.68	1.000

Table 9. Parameters of fitting structure 840-2

Haojie Li, Yan Zhang. Transmission Spectrum of Multilayer AlGaN Thin Film on Sapphire Substrate[J]. Acta Optica Sinica, 2020, 40(19): 1931002

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