• Journal of Inorganic Materials
  • Vol. 34, Issue 3, 269 (2019)
Xiao-Kai HU1、4, Shuang-Meng ZHANG1, Fu ZHAO1、2, Yong LIU1、3, Wei-Shu LIU1, [in Chinese]1、4, [in Chinese]1, [in Chinese]1、2, [in Chinese]1、3, and [in Chinese]1
Author Affiliations
  • 11. Department of Material Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
  • 22. Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology, Shenzhen 518055, China
  • 33. AECC Beijing Institute of Aeronautical Materials, Beijing 100095, China
  • 44. Institute for Frontier Materials, Deakin University, Geelong 3216, Australia
  • show less
    DOI: 10.15541/jim20180248 Cite this Article
    Xiao-Kai HU, Shuang-Meng ZHANG, Fu ZHAO, Yong LIU, Wei-Shu LIU, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Thermoelectric Device: Contact Interface and Interface Materials[J]. Journal of Inorganic Materials, 2019, 34(3): 269 Copy Citation Text show less
    Schematic diagram of structure of thermoelectric device (a) and electrode interface (b)
    . Schematic diagram of structure of thermoelectric device (a) and electrode interface (b)
    Interface micrograph of commercial Bi2Te3 refrigeration device after the thermal cycle test[17]
    . Interface micrograph of commercial Bi2Te3 refrigeration device after the thermal cycle test[17]
    Interface cracking and oxidation images of Skutterudite thermoelectric legs
    . Interface cracking and oxidation images of Skutterudite thermoelectric legs
    Schematic diagram of a scanning voltage probe for contact resistance measurement, and a Bi2Te3-based leg (inset) (a); contact resistance measurement for both n-type Ni/Bi2Te2.7Se0.3/Ni and p-type Ni/Bi0.4Sb1.6Te3/Ni(b)[21]
    . Schematic diagram of a scanning voltage probe for contact resistance measurement, and a Bi2Te3-based leg (inset) (a); contact resistance measurement for both n-type Ni/Bi2Te2.7Se0.3/Ni and p-type Ni/Bi0.4Sb1.6Te3/Ni(b)[21]
    Comparison of composition profile between Ni/Bi0.4Sb1.6Te3 interface (a)and Ni/Bi2Te2.7Se0.3Interface (b) obtained from a selected area SEM-EDS[21]IRL: interface reaction layer, TDR: Te-deficient region
    . Comparison of composition profile between Ni/Bi0.4Sb1.6Te3 interface (a)and Ni/Bi2Te2.7Se0.3Interface (b) obtained from a selected area SEM-EDS[21]
    IRL: interface reaction layer, TDR: Te-deficient region
    High-temperature reaction model of electrode interface of Bi2Te3-based thermoelectric leg[21]
    . High-temperature reaction model of electrode interface of Bi2Te3-based thermoelectric leg[21]
    Concentrating solar thermoelectric generators: new type of NiFe-based alloy applied to metallization of n-type Bi2Te3[12]
    . Concentrating solar thermoelectric generators: new type of NiFe-based alloy applied to metallization of n-type Bi2Te3[12]
    The maximum output power (a) and efficiency (b) vs. interface contact resistivity for the simulated Bi2Te3 leg (l is the leg height)
    . The maximum output power (a) and efficiency (b) vs. interface contact resistivity for the simulated Bi2Te3 leg (l is the leg height)
    (a) Power generation efficiency of segmented BT/SKD modules and (b) scanning electron microscopy image of SKD/Ti0.88Al0.12/Ni interface and electrode on hot side[13]
    . (a) Power generation efficiency of segmented BT/SKD modules and (b) scanning electron microscopy image of SKD/Ti0.88Al0.12/Ni interface and electrode on hot side[13]
    T range
    /℃
    Compositions/wt%Liquidus
    T/℃
    Solidus
    T/℃
    100-20052 In+48 Sn118118
    85 Sn+10 Bi+5 Zn190168
    63 Sn+37 Pb183183
    91.2 Sn+8.8 Zn198.5198.5
    200-30050 Sn+50 Pb212183
    96.5 Sn+3 Ag+0.5 Cu220217
    95 Sn+5 Sb240232
    300-4005 Sn+95 Pb312305
    95 Pb+5 Ag364305
    75 Sn+0.25 Sb+
    0.25 Bi+24.5 Pb
    380370
    400-50094 Sn+0.2 Pb+5.8 Sb461450
    88 Pb+11.75 Sb+0.25 Bi473473
    500-60097 Pb+0.4 Sb +
    2.35 Ag+0.25 Bi
    580580
    8.5 Sn+90 Pb+1.5 Ag588588
    Table 1. Compositions of some solders as well as the temperature (T) at liquidus and solidus[16]
    Xiao-Kai HU, Shuang-Meng ZHANG, Fu ZHAO, Yong LIU, Wei-Shu LIU, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Thermoelectric Device: Contact Interface and Interface Materials[J]. Journal of Inorganic Materials, 2019, 34(3): 269
    Download Citation