According to the urgent demands for the miniaturized packaging of micro-electromechanical systems (MEMS), a technology with high-reliability, low-cost, and high-aspect-ratio through-silicon via (TSV) structure was proposed. The core process of the technology was double-sided blind hole electroplating. The process of metal filling in the TSV structure consisted of front filling and back filling, obtaining a final TSV structure with a depth of 155 μm and a diameter of 41 μm. The electrical performance of the TSV structure was tested by power device analyzer. X-ray inspection machine and scanning electron microscope (SEM) were used to observe the defect distribution and filling conditions inside the TSV structure. The experimental results showed that the TSV samples had a good electrical conductivity and an approximate resistance value of 1.79×10-3 Ω. The hole of the sample was fully filled without voids. The research provided a promising strategy for the realization of miniaturized MEMS packaging.