• Infrared and Laser Engineering
  • Vol. 51, Issue 12, 20220141 (2022)
Mengya Zong1, Jingjing Dai1,*, Wei Li1, Congyang Wen2..., Tong Zhang1 and Zhiyong Wang1,2|Show fewer author(s)
Author Affiliations
  • 1Department of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
  • 2Institute of Atomic and Molecular Science, Shaanxi University of Science & Technology, Xi’an 710021, China
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    DOI: 10.3788/IRLA20220141 Cite this Article
    Mengya Zong, Jingjing Dai, Wei Li, Congyang Wen, Tong Zhang, Zhiyong Wang. Study on proton implantation isolation of GaAs-based devices[J]. Infrared and Laser Engineering, 2022, 51(12): 20220141 Copy Citation Text show less
    References

    [1] T Han, Y Zhang, C X Miao, et al. Anti-interference temperature control for VCSEL laser. Infrared and Laser Engineering, 49, 20190461(2020).

    [2] R T Elafandy, J H Kang, C Mi, et al. Study and application of birefringent nanoporous GaN in the polarization control of blue vertical-cavity surface-emitting lasers. ACS Photonics, 8, 1041-1047(2021).

    [3] H Wang, G Du, H Cui, et al. Room temperature continuous wave low threshold current ion implanted vertical cavity surface emitting laser using tungsten wires as mask. Optics & Laser Technology, 35, 341-344(2003).

    [4] H X Tong, C Z Tong, Z Y Wang, et al. Advances in the technology of 850 nm high-speed vertical cavity surface emitting lasers (Invited). Infrared and Laser Engineering, 49, 20201077(2020).

    [5] Y Q Zhang, Z Y Zuo, Q Kan, et al. Common failure modes and mechanisms in oxide vertical cavity surface emitting lasers. Chinese Optics, 15, 187-209(2022).

    [6] L N Pei, Y G Zou, L L Shi, et al. Design of low stress MEMS cantilever structure with tunable VCSEL. Infrared and Laser Engineering, 48, 0420002(2019).

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    [8] L Chen, Y Luo, Y Feng, et al. Temperature dependence of wet oxidation process based on VCSEL. Chinese Journal of Lasers, 47, 0701023(2020).

    [9] H Naito, M Miyamoto, Y Aoki, et al. Short-pulse operation of a high-power-density proton-implanted vertical-cavity surface-emitting laser array. Applied Physics Express, 5, 082104(2012).

    [10] H S Wang, G T Du, H F Cui, et al. Room temperature CW 850 nm vertical cavity surface emitting lasers fabricated by tilt ion implanting using Tungsten wires as mask. Chinese Journal of Lasers, 129-132(2004).

    [11] Pan G Z. Study of largescale inphased vertical cavity surface emitting laser array integrated phasecontrolled beam steering chip[D]. Beijing: Beijing University of Technology, 2020. (in Chinese)

    [12] M M Mao, C Xu, S M Wei, et al. The effects of proton implant energy on threshold and output power of vertical cavity surface emitting laser. Acta Physica Sinica, 61, 214207(2012).

    [13] Z Q Chen, X W Sun, G Q Xia, et al. Proton implant isolation of AlGaInP/GaAs heterojunction bipolar transistor structures in fabrication. Acta Physica Sinica, 49, 375-378(2000).

    [14] Wang S W. Investigation of the radiation damage of a new PIN semiconduct detect[D]. Lanzhou: Lanzhou University, 2006. (in Chinese)

    [15] Ge Z Y. The study on GaAs photoconduct detect by proton irradiation[D]. Chengdu: Sichuan University, 2004. (in Chinese)

    [16] Mao M M. Study of antiguide vertical cavity surface emitting laser its two dimensional coherently coupled array[D]. Beijing: Beijing University of Technology, 2014. (in Chinese)

    [17] Z A Que, X Y Hao, G K He, et al. Simulation of ion implantation process for coaxial HpGe detector. Nuclear Electronics & Detection Technology, 40, 239-243(2020).

    Mengya Zong, Jingjing Dai, Wei Li, Congyang Wen, Tong Zhang, Zhiyong Wang. Study on proton implantation isolation of GaAs-based devices[J]. Infrared and Laser Engineering, 2022, 51(12): 20220141
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