• Infrared and Laser Engineering
  • Vol. 51, Issue 12, 20220141 (2022)
Mengya Zong1, Jingjing Dai1,*, Wei Li1, Congyang Wen2..., Tong Zhang1 and Zhiyong Wang1,2|Show fewer author(s)
Author Affiliations
  • 1Department of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
  • 2Institute of Atomic and Molecular Science, Shaanxi University of Science & Technology, Xi’an 710021, China
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    DOI: 10.3788/IRLA20220141 Cite this Article
    Mengya Zong, Jingjing Dai, Wei Li, Congyang Wen, Tong Zhang, Zhiyong Wang. Study on proton implantation isolation of GaAs-based devices[J]. Infrared and Laser Engineering, 2022, 51(12): 20220141 Copy Citation Text show less
    Average range distribution curve of proton during H+ ion implantation with different energy
    Fig. 1. Average range distribution curve of proton during H+ ion implantation with different energy
    (a) Proton concentration distribution curve during H+ ion implantation with different energy; (b) Proton concentration distribution curve depth during H+ ion implantation with different dose
    Fig. 2. (a) Proton concentration distribution curve during H+ ion implantation with different energy; (b) Proton concentration distribution curve depth during H+ ion implantation with different dose
    Lattice (a) local defects and (b) a large number of defect clusters produced by ion collision
    Fig. 3. Lattice (a) local defects and (b) a large number of defect clusters produced by ion collision
    Epitaxial structure of VCSEL
    Fig. 4. Epitaxial structure of VCSEL
    Proton implantation process diagram
    Fig. 5. Proton implantation process diagram
    (a) The ombardment process and (b) the range distribution of 400 keV H+ ions
    Fig. 6. (a) The ombardment process and (b) the range distribution of 400 keV H+ ions
    SEM images under the injection conditions of (a) 280 keV,6×1014 cm−2; (b) 400 keV,2×1015 cm−2; (c) 320 keV,8×1014 cm−2 and (d) 360 keV,6×1014 cm−2
    Fig. 7. SEM images under the injection conditions of (a) 280 keV,6×1014 cm−2; (b) 400 keV,2×1015 cm−2; (c) 320 keV,8×1014 cm−2 and (d) 360 keV,6×1014 cm−2
    Vriation curve of resistance value with injection dose
    Fig. 8. Vriation curve of resistance value with injection dose
    P-I-V curve and the near field distribution of VCSEL at injection parameters: 320 keV, 8×1014cm−2
    Fig. 9. P-I-V curve and the near field distribution of VCSEL at injection parameters: 320 keV, 8×1014cm−2
    GroupEnergy/ keV Dose/ cm−2Average range, $ {R_P} $/μm Junction depth, $ {\text{2}}\Delta {R_P} $/μm Distance from active region, d/μm
    12806×10141.550.351.28
    23206×10141.670.611.03
    33208×10141.670.730.97
    43201×10151.680.840.9
    53202×10151.701.070.77
    63606×10141.720.710.93
    74002×10152.231.30
    Table 1. Characterization results of SEM
    Mengya Zong, Jingjing Dai, Wei Li, Congyang Wen, Tong Zhang, Zhiyong Wang. Study on proton implantation isolation of GaAs-based devices[J]. Infrared and Laser Engineering, 2022, 51(12): 20220141
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