[1] Ji X Y, Lei S M, Yu S Y et al. Single-crystal silicon optical fiber by direct laser crystallization. ACS Photonics, 4, 85-92(2017).
[2] Ji X Y, Page R L, Chaudhuri S et al. Single-crystal germanium core optoelectronic fibers. Advanced Optical Materials, 5, 1600592(2017).
[3] Erich K. Prospects and challenges of Si/Ge on chip optoelectronic cells. Optics & Optoelectronic Technology, 8, 1-6(2010).
[4] Claps R, Raghunathan V, Boyraz O et al. Raman amplification and lasing in SiGe waveguides. Optics Express, 13, 2459-2466(2005).
[5] Liu F, Mao L H, Han H P et al. Study on SiGe single crystal growth. Semiconductor Technology, 34, 328-332(2009).
[6] Takagi Y, Okano Y, Dost S. A numerical simulation study on the effects of crucible rotation and magnetic fields in growth of SiGe by the traveling heater method. Journal of Heat Transfer, 134, 012301(2012).
[7] Coucheron D A, Fokine M, Patil N et al. Laser recrystallization and inscription of compositional microstructures in crystalline SiGe-core fibres. Nature Communications, 7, 13265(2016).
[8] Sorgard T, Mühlberger K, Wu W et al. 2018, 13-18(2018).
[9] Chaudhuri S, Ji X Y, Huang H T et al. San Jose. California, D-19(2017).
[10] Wang D Y, Chen N, Chen Z Y et al. Composition and strain analysis of Si1-xGex core fiber with Raman spectroscopy. AIP Advances, 8, 065006(2018).
[11] Li C C, Chen N, Chen Z Y et al. SiGe core fiber F-P cavity temperature sensor based on fiber fusion and polishing technology. Optical Communication Technology, 44, 6-9(2020).
[12] Wang T J, Chen N, Zhao Z W et al. Nanjing, 844, 012036-26(2017).
[13] Azuma Y, Usami N, Ujihara T et al. Growth of SiGe bulk crystals with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature. Journal of Crystal Growth, 250, 298-304(2003).
[14] Balkanski M. Light scattering in solids. Elementary excitations in solids, 2, 245-267(1974).
[15] Tiller W A, Jackson K A, Rutter J W et al. The redistribution of solute atoms during the solidification of metals. Acta Metallurgica, 1, 428-437(1953).
[16] Feng S J, Li Q J, Taoka N et al. A study on composition and annealing of SiGe thin films. Microelectronics, 38, 660-662, 683(2008).
[17] Littlejohns C G, Nedeljkovic M, Mashanovich G Z et al. Paris, 27-29(2014).
[18] Matsumura R, Kato R, Sadoh T et al. Large-grain SiGe-on-insulator with uniform Si concentration by segregation-free rapid-melting growth. Applied Physics Letters, 105, 102106(2014).