LED has the advantages of high efficiency, energy saving and environmental protection. It is widely used in the field of lighting. Improving the luminous efficiency of LED has always been a research difficulty and hot spot in this field. To reduce the total reflection phenomenon between GaN material and air and to improve the light extraction efficiency, fabrication and properties of the anodized aluminum oxide (AAO) nanostructured LED device were studied. Through inductively coupled plasma (ICP) etching process, large-area ordered pore nanostructure arrays were successfully fabricated on the surface of p-GaN layer, and the quasi-photonic crystal structure with apertures of 250-500 nm and pore depths of 50-150 nm were obtained. The crystal structure greatly increases the luminous intensity of the LED, and the nano-array LED with pore diameter of 400 nm and depth of 150 nm is improved by 3.5 times in contrast to the LED without the nano-array.