The uniformity of the deposited lines by laser- focusing along the substrate surface is simulated with Gaussian laser. The result shows that the optical potential formed by the Gaussian laser is different from the collimated Gaussian laser either along or perpendicular to the laser axis. This difference results in asymmetry of atomic trajectories related to the laser standing node, and the congregation area is offset to smaller than absolute value of x0 when x0 varies from 0mm to -50mm. Consequently, all the full width at half maximum (FWHM), center peak and offsets of center of the deposited lines have the linear variations with x0, and each of them has 8nm increase, 50 units decrease and 15nm increase, respectively, when x0 varies from 0mm to -50 mm.